IXYS DSSK28-01AS, DSSK28-01A Datasheet
DSSK 28-01A
DSSK 28-01AS
Power Schottky Rectifier
with common cathode
V
RSM
V
RRM
Type
V V
100 100 DSSK 28-01A
100 100 DSSK 28-01AS
Symbol Conditions Maximum Ratings
I
FRMS
I
FAV
I
FSM
E
AS
I
AR
(dv/dt)
T
VJ
T
VJM
T
stg
P
tot
M
d
TC = 155°C; rectangular, d = 0.5 2x15 A
TVJ = 45°C; tp = 10 ms (50 Hz), sinev 230 A
IAS = 9.5 A; L = 180 µH; TVJ = 25°C; non repetitive 10 mJ
VA =1.5 • V
cr
typ.; f=10 kHz; repetitive 1 A
RRM
TC = 25°C 105 W
mounting torque (Version A only) 0.4...0.6 Nm
Weight typical 2 g
ACA
35 A
5000 V/µs
-55...+175 °C
175 °C
-55...+150 °C
I
V
V
FAV
RRM
F
= 15 A
= 100 V
= 0.64 V
TO-220 AB
(A-Type)
A
C
A
C (TAB)
TO-263 AB
(AS-Type)
A = Anode, C = Cathode , TAB = Cathode
A
A
C (TAB)
Features
• International standard package
• Very low V
F
• Extremely low switching losses
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Symbol Conditions Characteristic Values
typ. max.
IR TVJ = 25°C VR= V
TVJ = 125°C VR= V
V
F
IF = 15 A; TVJ = 125°C 0.64 V
RRM
RRM
0.5 mA
5mA
IF = 15 A; TVJ = 25°C 0.79 V
IF = 30 A; TVJ = 125°C 0.76 V
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, conditions and dimensions.
(Version A only) 0.5 K/W
1.4 K/W
© 2001 IXYS All rights reserved
Dimensions see IXYS databook 2001
223
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DSSK 28-01A
DSSK 28-01AS
100
A
I
F
10
T
175°C
150°C
125°C
1
0.0 0.2 0.4 0.6 0.8 1.0
V
F
Fig. 1 Maximum forward voltage
drop characteristics
40
A
35
I
F(AV)
30
25
20
15
10
5
d=0.5
=
VJ
25°C
V
DC
10
TVJ=175°C
mA
150°C
1
I
R
125°C
0.1
100°C
50°C
0.01
75°C
0.001
25°C
0.0001
0 20406080100
V
V
R
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
30
W
25
P
(AV)
20
15
10
5
R
d =
DC
0.5
0.33
0.25
0.17
0.08
1000
pF
C
T
100
10
0 20406080100
Fig. 3 Typ. junction capacitance C
R
versus reverse voltage V
10000
A
I
FSM
1000
TVJ= 25°C
V
R
V
T
R
0
04080120160
T
C
Fig. 4 Average forward current I
versus case temperature T
1
D=0.5
K/W
0.33
0.25
Z
thJC
0.17
0.08
°C
F(AV)
C
0
515250102030
I
F(AV)
Fig. 5 Forward power loss
characteristics
100
A
10 100 1000 10000
t
0.1
Single Pulse
(Thermal Resistance)
t
DSS 16-01A
s
0.01
0.0001 0.001 0.01 0.1 1 10
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
µs
P
© 2001 IXYS All rights reserved
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