IXYS DSS60-0045B Datasheet
DSS 60-0045B
Power Schottky Rectifier
V
RSM
V V
45 45 DSS 60-0045B
Symbol Conditions Maximum Ratings
I
FRMS
I
FAV
I
FSM TVJ
E
AS
I
AR
(dv/dt)
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight typical 6 g
Symbol Conditions Characteristic Values
IR TVJ = 25°C VR= V
V
F
V
RRM
Type
TC = 100°C; rectangular, d = 0.5 60 A
= 45°C; tp = 10 ms (50 Hz), sine 600 A
IAS = 20 A; L = 180 µH; TVJ = 25°C; non repetitive 57 mJ
VA =1.5 • V
cr
typ.; f=10 kHz; repetitive 2 A
RRM
-55...+150 °C
-55...+150 °C
TC = 25°C 155 W
mounting torque 0.8...1.2 Nm
typ. max.
TVJ = 100°C VR= V
RRM
RRM
IF = 60 A; TVJ = 125°C 0.57 V
IF = 60 A; TVJ = 25°C 0.60 V
IF = 120 A; TVJ = 125°C 0.93 V
A
70 A
1000 V/ms
150 °C
10 mA
250 mA
I
FAV
V
V
TO-247 AD
C
A = Anode, C = Cathode , TAB = Cathode
RRM
F
C
A
= 60 A
= 45 V
= 0.57 V
Features
• International standard package
• Very low V
• Extremely low switching losses
F
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see outlines.pdf
C (TAB)
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
0.25 K/W
0.8 K/W
© 2002 IXYS All rights reserved
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1 - 2
DSS 60-0045B
100
A
I
F
10
=
T
VJ
150°C
125°C
25°C
1
0.00.20.40.6
V
F
Fig. 1 Maximum forward voltage
drop characteristics
80
A
70
60
I
F(AV)
50
40
30
20
10
d=0.5
DC
10000
10000
mA
pF
TVJ=150°C
1000
I
R
125°C
C
T
100
100°C
10
75°C
50°C
1
25°C
0.1
V
0 1020304050
V
V
R
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
45
R
1000
100
0 10203040
Fig. 3 Typ. junction capacitance C
R
versus reverse voltage V
10000
TVJ= 25°C
V
R
V
T
R
W
40
35
P
(AV)
30
25
20
15
10
d =
DC
0.5
0.33
0.25
0.17
0.08
I
FSM
A
1000
5
0
0 40 80 120 160
T
C
Fig. 4 Average forward current I
versus case temperature T
°C
F(AV)
0
10 30 500 204060
I
F(AV)
A
Fig. 5 Forward power loss
C
characteristics
100
10 100 1000 10000
µs
t
P
1
K/W
D=0.5
Z
thJC
0.33
0.25
0.17
0.08
Single Pulse
0.1
0.05
0.001 0.01 0.1 1 10
s
Fig. 6 Transient thermal impedance junction to case at various duty cycles
DSS 60-0045B
t
Note: All curves are per diode
© 2002 IXYS All rights reserved
232
2 - 2
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