Page 1
DSS2x81-0045B
V
V
A
j
V
V
●
●
●
●
●
Schottky Diode
High Performance Schottky Diode
=
I
=
= 0.63
2x
45
80
Low Loss and Soft Recovery
Parallel legs
Part number
DSS2x81-0045B
Backside: isolated
Features / Advantages:
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
Symbol Definition
V
RRM
I
R
V
F
max. repetitive re verse voltage
reverse current
forward voltage
Applications:
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
Conditions Unit
T
VR=
V
I
45
=
R
=A
80
F
V°C=
V45
T
T
T
IF=A160
I
=A
80
F
=A160
I
F
I A
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
C
J
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
unction capacitance
for power loss calculation only
rectangular 0.5
t = 10 ms
V= V;5T
R
d =
(50 Hz), sine
f = 1 MHz = °C25
T
T
TVJ= 150 °C
T
Package:
● Housing:
rIndustry standard outline
rCu base plate internal DCB isolated
rIsolation Voltage 3000 V
rEpoxy meets UL 94V-0
rRoHS compliant
VJ
VJ
VJ
VJ
VJ
C
C
VJ
VJ
°C=25
25
°C=mA
100
25
=°C
=°C
125
= 85°C
25
°C=
= 45°C
SOT-227B (minibloc)
R a t i n g s
typ. max.
min.
-40
2.93 nF
45
60
250
0.65
0.96
0.63
0.96
80
0.30
0.80
150
150
800
mA
m
4
K/W
°C
WT
V
V
V
V
V
V
Ω
A
IXYS reserves the right to change limits, conditions and dimensions. 20110603a
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
Page 2
DSS2x81-0045B
)
Ratings
Symbol Definition
I
R
T
RMS
stg
thCH
RMS current
thermal resistance case to heatsink
storage temperature
per terminal
1
Weight g30
M
D
M
T
V
ISOL
d mm
Spp/App
Spb/Apb
mounting torque
terminal torque
isolation voltage
creepage | striking distance on surface | through air terminal to terminal
creepage | striking distance on surface | through air terminal to backside
10.5 3.2
8.6 6.8
-40
1.1
1.1
typ. max.min.Conditions
Unit
100
K/W0.10
°C150
Nm1.5
Nm1.5
mmd
A
V3000t = 1 second
V2500t = 1 minute
Product Marking
Logo Part No.
YYWWZ
DateCode
Assembly Line
abcde
XXXXXX
Assembly Code
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DSS2x81-0045B 470422Tube 10
Marking o n Pr o duc t
DSS2x81-0045B
IXYS reserves the right to change limits, conditions and dimensions. 20110603a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
Page 3
DSS2x81-0045B
Outlines
SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20110603a
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
Page 4
DSS2x81-0045B
100
I
F
10
[A]
T
150°C
125°C
1
0.0 0.2 0.4 0.6 0.8
[V]
V
F
Fig. 1 Maximum forward voltage
drop characteristics
120
100
80
I
F(AV)
60
[A]
40
20
d = 0.5
VJ
25°C
10000
TVJ=150°C
1000
125°C
100
I
=
[mA]
100°C
R
10
75°C
50°C
1
25°C
0.1
01020304050
[V]
V
R
Fig. 2 Typ. reverse current
I
vs. reverse voltage V
R
10000
C
T
1000
[pF]
100
010203040
V
R
TVJ= 25°C
[V]
Fig. 3 Typ. junction capacitance
C
R
vs. reverse voltage V
T
R
80
70
60
50
DC
(AV)
[W]
40
30
d=
DC
0.5
0.33
P
0.25
20
0.17
0.08
10
0
04080120160
[°C]
T
C
Fig. 4 Average forward current
I
vs. case temp. T
F(AV)
C
0
020406080100
[A]
I
F(AV)
Fig. 5 Forward power loss
characteristics
1
D=0.5
0.33
Z
thJC
0.25
0.17
[K/W]
0.08
Single Pulse
0.1
0.05
DSS2x81-0045B
0.001 0.01 0.1 1 10
t [s]
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
IXYS reserves the right to change limits, conditions and dimensions. 20110603a
Data according to IEC 60747and per diode unless otherwise specified
© 2011 IXYS all rights reserved
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