IXYS DSS2X41-01A Datasheet
DSS 2x41-01A
Power Schottky Rectifier
V
RSM
V V
100 100 DSS 2x41-01A
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FAVM
I
FSM
E
AS
I
AR
(dv/dt)
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
V
RRM
Type
TC = 110°C; rectangular, d = 0.5 40
TC = 110°C; rectangular, d = 0.5; per device 80
= 45°C; tp = 10 ms (50 Hz), sine 450
T
VJ
= 11 A; L = 180 µH; TVJ = 25°C; non repetitive 13
I
AS
VA =1.5 • V
cr
typ.; f=10 kHz; repetitive 1.1
RRM
-40...+150 °C
-40...+150 °C
= 25°C 115
T
C
50/60 Hz, RMS 2500 V~
I
£ 1 mA
ISOL
70
5000
150 °C
A
A
A
A
mJ
A
V/ms
W
I
V
V
FAV
RRM
F
= 2x40 A
= 100 V
= 0.70 V
miniBLOC, SOT-227 B
Features
• International standard package
miniBLOC
• Isolation voltage 2500 V~
• UL registered E 72873
• 2 independent Schottky diodes in
1 package
• Very low V
• Extremely low switching losses
F
• Low IRM-values
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
M
d
mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in.
terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.
Weight typical 30 g
Symbol Conditions Characteristic Values
typ. max.
I
mA
R
V
F
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
= 25°CVR= V
T
VJ
TVJ = 125°CVR= V
= 40 A; TVJ = 125°C 0.70
I
F
IF = 40 A; TVJ =25°C 0.83
RRM
RRM
10
IF = 80 A; TVJ = 125°C 0.86
1.1
0.1
1
mA
V
V
V
K/W
K/W
© 2000 IXYS All rights reserved
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see outlines.pdf
824
1 - 2
DSS 2x41-01A
100
A
I
F
10
T
VJ
150°C
125°C
25°C
1
0.0 0.2 0.4 0.6 0.8 1.0
V
F
Fig. 1 Maximum forward voltage
drop characteristics
80
A
60
I
F(AV)
d=0.5
DC
10
mA
TVJ=150°C
I
1
R
125°C
100°C
0.1
0.01
75°C
50°C
25°C
=
0.001
V
020406080100
V
V
R
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
60
R
10000
pF
C
T
1000
100
0 20406080100
Fig. 3 Typ. junction capacitance C
R
versus reverse voltage V
10000
TVJ= 25°C
V
R
V
T
R
W
50
P
(AV)
40
I
A
FSM
40
20
0
0 40 80 120 160
T
C
Fig. 4 Average forward current I
versus case temperature T
1
D=0.5
K/W
0.33
0.25
Z
thJC
0.17
0.08
0.1
Single Pulse
(Thermal Res ist an c e)
°C
F(AV)
30
d =
DC
1000
0.5
20
0.33
0.25
0.17
I
F(AV)
0.08
100
A
10 100 1000 10000
µs
t
P
10
0
10 30 500 204060
Fig. 5 Forward power loss
C
characteristics
0.01
0.001 0.01 0.1 1 10
DSS 2x41- 01A
s
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
© 2000 IXYS All rights reserved
824
2 - 2
Loading...