IXYS DSS 2x121-0045B Service Manual

DSS 2x121-0045B
Power Schottky Rectifier
V
RSM
V V
45 45 DSS 2x121-0045B
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FAVM
I
FSM
E
AS
I
AR
(dv/dt) T
VJ
T
VJM
T
stg
P
tot
V
ISOL
V
RRM
Type
TC = 100°C; rectangular, d = 0.5 120 TC = 100°C; rectangular, d = 0.5; per device 240
= 45°C; tp = 10 ms (50 Hz), sine 1600
T
VJ
= 28 A; L = 180 µH; TVJ = 25°C; non repetitive 112
I
AS
VA =1.5 • V
cr
typ.; f=10 kHz; repetitive 2.8
RRM
-40...+150 °C
-40...+150 °C
= 25°C 310
T
C
50/60 Hz, RMS 2500 V~ I
1 mA
ISOL
150
1000
150 °C
A A A
A
mJ
A
V/µs
W
I V V
FAV
= 2x120 A = 45 V
RRM
= 0.59 V
F
miniBLOC, SOT-227 B
• International standard package miniBLOC
• Isolation voltage 2500 V~
• UL registered E 72873
• 2 independent Schottky diodes in 1 package
• Very low V
• Extremely low switching losses
F
• Low IRM-values
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
M
d
mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in.
.
terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.
Advantages
• High reliability circuit operation
Weight typical 30 g
• Low voltage peaks for reduced
protection circuits
• Low noise switching
Symbol Conditions Characteristic Values
• Low losses
typ. max.
I
mA
R
V
F
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
= 25°CVR= V
T
VJ
TVJ = 100°CVR= V
= 120 A; TVJ = 125°C 0.59
I
F
IF = 120 A; TVJ =25°C 0.62
RRM RRM
120 500
IF = 240 A; TVJ = 125°C 0.97
0.4
0.1
mA
V V V
K/W K/W
Dimensions see Outlines.pdf
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1 - 2
DSS 2x121-0045B
300
A
100
I
F
10
T
=
VJ
150°C 125°C
25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 V
F
Fig. 1 Maximum forward voltage
drop characteristics
160
A
120
I
F(AV)
d=0.5
80
40
0
0 4 0 80 120 160
T
C
Fig. 4 Average forward current I
versus case temperature T
DC
°C
V
F(AV)
C
10000
mA
TVJ=150°C
1000
I
R
125°C
100
100°C
75°C
10
50°C
1
25°C
0.1 0 1020304050
V
V
R
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
110 100
W 90
P
(AV)
80 70 60 50 40 30 20 10
0
04080120
I
F(AV)
R
d = DC
0.5
0.33
0.25
0.17
0.08
A
Fig. 5 Forward power loss
characteristics
10000
pF
C
T
1000
100
0 10203040
Fig. 3 Typ. junction capacitance C
R
versus reverse voltage V
A
I
FSM
TVJ= 25°C
V
R
µs
t
P
V
T
R
1
K/W
Z
thJC
D=0.5
0.33
0.25
0.17
0.1
0.08 Single Pulse
0.01
0.001 0.01 0.1 1 10
s
DSS2x121-0045B
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
© 2002 IXYS All rights reserved
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