IXYS DSS2X101-015A Datasheet
DSS 2x101-015A
Power Schottky Rectifier
Preliminary Data
V
RSM
V V
150 150 DSS 2x101-015A
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FAVM
I
FSM
E
AS
I
AR
(dv/dt)
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
V
RRM
Type
TC = 110°C; rectangular, d = 0.5 100
TC = 110°C; rectangular, d = 0.5; per device 200
TVJ = 45°C; tp = 10 ms (50 Hz), sine 1200
= tbd A; L = 180 µH; TVJ = 25°C; non repetitive tbd
I
AS
VA =1.5 • V
cr
typ.; f=10 kHz; repetitive tbd
RRM
18000
-40...+150 °C
-40...+150 °C
T
= 25°C 310
C
50/60 Hz, RMS 2500 V~
I
£ 1 mA
ISOL
150
A
A
A
A
mJ
A
V/ms
150 °C
W
I
V
V
FAV
= 2x100 A
= 150 V
RRM
= 0.78 V
F
miniBLOC, SOT-227 B
Features
• International standard package
miniBLOC
• Isolation voltage 2500 V~
• UL registered E 72873
• 2 independent Schottky diodes in
1 package
• Very low V
• Extremely low switching losses
F
• Low IRM-values
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
M
d
mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in.
terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.
Weight typical 30 g
Symbol Conditions Characteristic Values
typ. max.
= 25°CVR= V
I
mA
R
V
F
T
VJ
TVJ = 125°CVR= V
= 100 A; TVJ = 125°C 0.78
I
F
IF = 100 A; TVJ =25°C 0.90
RRM
RRM
IF = 200 A; TVJ = 125°C 0.99
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
0.1
40
0.4
4
mA
V
V
V
K/W
K/W
© 2000 IXYS All rights reserved
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see outlines.pdf
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DSS 2x101-015A
300
A
100
I
F
10
T
VJ
150°C
125°C
25°C
1
0.0 0.2 0.4 0.6 0.8 1.0
V
F
Fig. 1 Maximum forward voltage
drop characteristics
160
A
I
F(AV)
120
100
mA
10
TVJ=150°C
I
R
125°C
1
100°C
10000
pF
C
T
1000
0.1
=
V
75°C
50°C
0.01
25°C
0.001
0 40 80 120 160
V
V
R
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
R
100
0 40 80 120 160
Fig. 3 Typ. junction capacitance C
R
versus reverse voltage V
TVJ= 25°C
V
R
V
T
R
140
W
120
P
(AV)
100
I
A
FSM
80
d=0.5
40
0
0 40 80 120 160
T
C
Fig. 4 Average forward current I
versus case temperature T
1
K/W
Z
thJC
D=0.5
0.33
0.25
0.17
0.1
0.08
DC
°C
F(AV)
C
Single Pulse
80
d =
DC
60
40
0.5
0.33
0.25
0.17
0.08
20
0
050100150
I
A
F(AV)
Fig. 5 Forward power loss
characteristics
µs
t
P
0.01
0.001 0.01 0.1 1 10
s
DSS 2x101-015A
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
© 2000 IXYS All rights reserved
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