IXYS DSS25-0045A Datasheet
DSS 25-0045A
Power Schottky Rectifier
V
RSM
V V
45 45 DSS 25-0045A
Symbol Conditions Maximum Ratings
I
FRMS
I
FAV
I
FSM TVJ
E
AS
I
AR
(dv/dt)
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight typical 2 g
Symbol Conditions Characteristic Values
IR TVJ = 25°C VR= V
V
F
V
RRM
Type
TC = 155°C; rectangular, d = 0.5 25 A
= 45°C; tp = 10 ms (50 Hz), sine 400 A
IAS = 18 A; L = 180 µH; TVJ = 25°C; non repetitive 46 mJ
VA =1.5 • V
cr
typ.; f=10 kHz; repetitive 1.8 A
RRM
-55...+175 °C
-55...+150 °C
TC = 25°C 135 W
mounting torque 0.4...0.6 Nm
typ. max.
TVJ = 125°C VR= V
RRM
RRM
IF = 25 A; TVJ = 125°C 0.59 V
IF = 25 A; TVJ = 25°C 0.69 V
IF = 50 A; TVJ = 125°C 0.73 V
A
35 A
1000 V/ms
175 °C
1mA
10 mA
I
FAV
V
V
TO-220 AC
C
A = Anode, C = Cathode , TAB = Cathode
RRM
F
C
= 25 A
= 45 V
= 0.59 V
A
Features
• International standard package
• Very low V
• Extremely low switching losses
F
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see outlines.pdf
C (TAB)
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
0.5 K/W
1.1 K/W
© 2002 IXYS All rights reserved
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1 - 2
DSS 25-0045A
100
A
I
F
10
=
T
VJ
175°C
150°C
125°C
25°C
1
0.0 0.2 0.4 0.6 0.8 1.0
V
F
Fig. 1 Maximum forward voltage
drop characteristics
40
A
35
30
I
F(AV)
25
20
15
10
5
d=0.5
V
DC
100
mA
TVJ=175°C
10
I
R
150°C
1
125°C
100°C
0.1
75°C
50°C
0.01
25°C
0.001
0 1020304050
V
V
R
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
25
W
20
P
(AV)
15
10
5
R
d =
DC
0.5
0.33
0.25
0.17
0.08
10000
pF
C
T
1000
100
0 10203040
Fig. 3 Typ. junction capacitance C
R
versus reverse voltage V
10000
A
I
FSM
1000
TVJ= 25°C
V
R
V
T
R
0
04080120160
T
C
Fig. 4 Average forward current I
versus case temperature T
°C
F(AV)
C
0
51525350 102030
I
F(AV)
Fig. 5 Forward power loss
characteristics
100
A
10 100 1000 10000
µs
t
P
1
K/W
D=0.5
0.33
Z
thJC
0.25
0.17
0.08
0.1
Single Pulse
(Therma l Re s istance)
0.01
0.0001 0.001 0.01 0.1 1 10
DSS 25-0045A
s
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
© 2002 IXYS All rights reserved
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