IXYS DSS25-0025B Datasheet
DSS 25-0025B
Power Schottky Rectifier
Preliminary Data
V
RSM
V V
25 25 DSS 25-0025B
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FSM TVJ
E
AS
I
AR
(dv/dt)
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight typical 2 g
Symbol Conditions Characteristic Values
IR TVJ = 25°C VR= V
V
F
V
RRM
Type
A
35 A
TC = 125°C; rectangular, d = 0.5 25 A
= 45°C; tp = 10 ms (50 Hz), sine 300 A
IAS = tbd A; L = 180 µH; TVJ = 25°C; non repetitive tbd mJ
VA =1.5 • V
cr
typ.; f=10 kHz; repetitive tbd A
RRM
tbd V/ms
-55...+150 °C
150 °C
-55...+150 °C
TC = 25°C90W
mounting torque 0.4...0.6 Nm
typ. max.
20 mA
80 mA
TVJ = 100°C VR= V
RRM
RRM
IF = 25 A; TVJ = 125°C 0.44 V
IF = 25 A; TVJ = 25°C 0.52 V
IF = 50 A; TVJ = 125°C 0.66 V
I
FAV
V
V
TO-220 AC
C
A = Anode, C = Cathode , TAB = Cathode
RRM
F
C
= 25 A
= 25 V
= 0.44 V
A
Features
• International standard package
• Very low V
• Extremely low switching losses
F
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see outlines.pdf
C (TAB)
R
thJC
R
thCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
0.5 K/W
1.4 K/W
© 2002 IXYS All rights reserved
232
1 - 2
DSS 25-0025B
100
A
I
F
10
T
=
VJ
150°C
125°C
25°C
1
0.00.20.40.6
V
F
Fig. 1 Maximum forward voltage
drop characteristics
40
A
I
F(AV)
30
d=0.5
DC
1000
TVJ=150°C
mA
I
100
125°C
R
100°C
10
pF
C
T
1000
10000
75°C
1
50°C
0.1
25°C
V
0 5 10 15 20 25
V
V
R
Fig. 2 Typ. value of reverse current I
versus reverse voltage V
R
R
20
0.01
W
P
(AV)
15
100
0 5 1 0 15 20 25
Fig. 3 Typ. junction capacitance C
versus reverse voltage V
10000
A
I
FSM
TVJ= 25°C
V
R
V
T
R
20
10
0
0 40 80 1 20 160
T
C
Fig. 4 Average forward current I
versus case temperature T
2
1
D=0.5
K/W
0.33
0.25
Z
thJC
0.17
0.08
0.1
°C
F(AV)
C
Single Pulse
10
5
0
0 102030
I
F(AV)
Fig. 5 Forward power loss
characteristics
d =
DC
0.5
0.33
0.25
0.17
0.08
1000
100
A
10 100 1000 10000
µs
t
P
0.01
0.0001 0.001 0.01 0.1 1 10
DSS 25-0025B
s
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
© 2002 IXYS All rights reserved
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