© 2000 IXYS All rights reserved
Pulse test: QPulse Width = 5 ms, Duty Cycle < 2.0 %
R Pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, conditions and dimensions.
Power Schottky Rectifier
ISOPLUS220
TM
Electrically Isolated Back Surface
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low cathode to tab capacitance(<35pF)
International standard package
Very low V
F
Extremely low switching losses
Low I
RM
-values
Epoxy meets UL 94V-0
Applications
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
A
C
Isolated back surface *
C
A
* Patent pending
Symbol Conditions Maximum Ratings
I
FRMS
35 A
I
FAV
T
C
= 140°C; rectangular, d = 0.5 20 A
I
FSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine 120 A
E
AS
IAS = 8 A; L = 180 µH; TVJ = 25°C; non repetitive 7 mJ
I
AR
VA =1.5 V
RRM
typical; f=10 kHz; repetitive 0.8 A
(dv/dt)
cr
5000 V/µs
T
VJ
-55...+175 °C
T
VJM
175 °C
T
stg
-55...+150 °C
P
tot
T
C
= 25°C90W
V
ISOL
50/60Hz RMS; I
ISOL
< 1 mA 2500 V~
F
C
Mounting force 11... 65 / 2.4 ...11 N/lb
Weight typical 3 g
I
FAV
= 20 A
V
RRM
= 100 V
V
F
= 0.65 V
DSS 20-01AC
V
RSM
V
RRM
Type
V V
100 100 DSS 20-01AC
Symbol Conditions Characteristic Values
typ. max.
I
R
Q T
VJ
= 25°C VR= V
RRM
300 µA
TVJ = 125°C VR= V
RRM
2.5 mA
V
F
R IF = 10 A; TVJ = 125°C 0.65 V
I
F
= 10 A; TVJ = 25°C 0.80 V
I
F
= 20 A; TVJ = 125°C 0.76 V
R
thJC
1.7 K/W
R
thCH
0.6 K/W
ADVANCE TECHNICAL INFORMATION
98787 (12/00)