IXYS DSS17-06CR Datasheet

DSS 17-06CR

HiPerDynTM Schottky Diode

(Electrically Isolated Back Surface)

Preliminary Data

V

RSM

V V

600 600 DSS 17-06CR

Symbol Conditions Maximum Ratings
I

FRMS

I

FAVM

I

FRM

I

FSM

E

AS

I

AR

T

VJ

T

VJM

T

stg

P

tot

V

ISOL

F

C

Weight typical 6 g

V

RRM

Type

A

50 A
TC = 95°C; rectangular, d = 0.5 17 A
tP < 10 µs; rep. rating, pulse width limited by T

VJM

tbd A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 200 A
TVJ = 25°C; non-repetitive tbd mJ

IAS = 2 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive tbd A

-55...+175 °C
175 °C

-55...+150 °C

TC = 25°C 105 W
50/60 Hz RMS; I

≤ 1 mA 2500 V~

ISOL

mounting force with clip 20...120 N

I

FAV

V
t

rr

ISOPLUS 247

C

A = Anode, C = Cathode
* Patent pending

RRM

= 17 A
= 600 V
= 45 ns

TM

C

A

Isolated back surface *

Features

●

Silicon chip on Direct-Copper-Bond
substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

●

Low cathode to tab capacitance (<25pF)

●

International standard package

●

Planar passivated chips

●

Very short recovery time

●

Extremely low switching losses

●

Low IRM-values

●

Soft recovery behaviour

●

Epoxy meets UL 94V-0

●

Isolated and UL registered E153432

Symbol Conditions Characteristic Values

typ. max.

IR① TVJ = 25°C VR= V

TVJ = 125°C VR= V

VF② I

= 15 A; TVJ= 125°C 2.71 V

F

RRM
RRM

0.5 mA
5mA

TVJ= 25°C 3.32 V

R

thJC

R

thCH

t

rr

IF = 10 A; -di/dt = 100 A/µs; 45 ns

0.25 K/W

1.4 K/W

VR = 100 V; TVJ = 25°C

I

RM

VR = 100 V; IF = 10 A; -diF/dt = 100 A/µs 4.0 A
TVJ = 25°C

Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %

② Pulse Width = 300 µs, Duty Cycle < 2.0 %

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved

Applications

●

Antiparallel diode for high frequency
switching devices

●

Antisaturation diode

●

Snubber diode

●

Free wheeling diode in converters
and motor control circuits

●

Rectifiers in switch mode power
supplies (SMPS)

●

Inductive heating

●

Uninterruptible power supplies (UPS)

●

Ultrasonic cleaners and welders

Advantages

●

Avalanche voltage rated for reliable
operation

●

Soft reverse recovery for low EMI/RFI

●

Low IRM reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating
switch

Dimensions see outlines.pdf

048

1 - 2

DSS 17-06CR

100

A

I

F

10

T

VJ

175°C
150°C
125°C

25°C

1

012345

V

F

Fig. 1 Maximum forward voltage

drop characteristics

30

A

25

I

F(AV)

20

15

10

d=0.5

DC

10

mA

TVJ=175°C

1000

pF

1

150°C

I

R

125°C

C

T

0.1

0.01

100°C

75°C

50°C

=

100

0.001

25°C

0.0001

V

0 200 400 600

Fig. 2 Typ. value of reverse current I

versus reverse voltage V

V

V

R

R

R

10

0 200 400 600

Fig. 3 Typ. junction capacitance C

versus reverse voltage V

TVJ= 25°C

V

V

R

T

R

70

W

60

P

(AV)

50

I

A

FSM

d =

40

DC

0.5

30

0.33

0.25

0.17

20

0.08

5

0

04080120160

T

C

Fig. 4 Average forward current I

versus case temperature T

°C

F(AV)

C

10

0

5152501020

I

F(AV)

Fig. 5 Forward power loss

characteristics

A

t

2

1

D=0.5

K/W

0.33

Z

thJC

0.25

0.17

0.08

0.1

Single Pulse

t

DSS17-06CR

s

0.01

0.0001 0.001 0.01 0.1 1 10

Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode

µs

P

© 2000 IXYS All rights reserved

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