IXYS DSS10-0045B Datasheet

DSS 10-0045B

Power Schottky Rectifier

V

RSM

V V

45 45 DSS 10-0045B

Symbol Conditions Maximum Ratings
I

FRMS

I

FAV

I

FSM

E

AS

I

AR

(dv/dt)
T

VJ

T

VJM

T

stg

P

tot

M

d

Weight typical 2 g

Symbol Conditions Characteristic Values

I

 TVJ = 25°C VR= V

R

V

F

V

RRM

Type

A

35 A

TC = 135°C; rectangular, d = 0.5 10 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 160 A
IAS = 13 A; L = 180 µH; TVJ = 25°C; non repetitive 24 mJ
VA =1.5 • V

cr

typ.; f=10 kHz; repetitive 1.3 A

RRM

1000 V/ms

-55...+150 °C
150 °C

-55...+150 °C

TC = 25°C75W
mounting torque 0.4...0.6 Nm

typ. max.

5mA

50 mA

TVJ = 100°C VR= V

RRM
RRM

IF = 10 A; TVJ = 125°C 0.45 V
IF = 10 A; TVJ = 25°C 0.51 V
IF = 20 A; TVJ = 125°C 0.70 V

I

FAV

V
V

TO-220 AC

C

A = Anode, C = Cathode , TAB = Cathode

RRM
F

C

= 10 A
= 45 V
= 0.40 V

A

Features

• International standard package

• Very low V

• Extremely low switching losses

F

• Low IRM-values

• Epoxy meets UL 94V-0

Applications

• Rectifiers in switch mode power
supplies (SMPS)

• Free wheeling diode in low voltage
converters

Advantages

• High reliability circuit operation

• Low voltage peaks for reduced
protection circuits

• Low noise switching

• Low losses

Dimensions see outlines.pdf

C (TAB)

R

thJC

R

thCH

Pulse test:  Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, Conditions and dimensions.

© 2000 IXYS All rights reserved

1.7 K/W

0.5 K/W

007

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DSS 10-0045B

100

A

I

F

10

=

T

VJ

150°C
125°C

25°C

1

0.0 0.2 0.4 0.6 0.8 1.0

V

F

Fig. 1 Maximum forward voltage

drop characteristics

40

A

30

I

F(AV)

20

d=0.5

10

0

0 40 80 120 160

T

C

Fig. 4 Average forward current I

versus case temperature T

V

DC

°C

F(AV)

1000

C

T

pF

I

R

1000

mA

100

10

TVJ=150°C

125°C

100°C

75°C

1

50°C

0.1

25°C

0.01
0 1020304050

V

V

R

Fig. 2 Typ. value of reverse current I

versus reverse voltage V

R

100

010203040

Fig. 3 Typ. junction capacitance C

R

versus reverse voltage V

TVJ= 25°C

V

R

V

T

R

40

W

30

P

(AV)

I

A

FSM

20

d =
DC

0.5

10

0.33

0.25

0.17

0.08

0

0 102030

I

F(AV)

A

µs

t

P

Fig. 5 Forward power loss

C

characteristics

1

D=0.5

0.33

K/W

0.25

Z

0.17

thJC

0.08

0.1

Single Pulse

0.01

0.0001 0.001 0.01 0.1 1 10

DSS 10-0045B

s

t

Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode

© 2000 IXYS All rights reserved

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