IXYS DSS10-0045A Datasheet

© 2000 IXYS All rights reserved
1 - 2
Power Schottky Rectifier
Features
• International standard package
• Very low V
F
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power supplies (SMPS)
• Free wheeling diode in low voltage converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced protection circuits
• Low noise switching
• Low losses
Dimensions see outlines.pdf
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
A
C
C
A
TO-220 AC
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol Conditions Maximum Ratings I
FRMS
35 A
I
FAV
TC = 160°C; rectangular, d = 0.5 10 A
I
FSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine 140 A
E
AS
IAS = 13 A; L = 180 µH; TVJ = 25°C; non repetitive 24 mJ
I
AR
VA =1.5 • V
RRM
typ.; f=10 kHz; repetitive 1.3 A
(dv/dt)
cr
1000 V/ms
T
VJ
-55...+175 °C
T
VJM
175 °C
T
stg
-55...+150 °C
P
tot
TC = 25°C90W
M
d
mounting torque 0.4...0.6 Nm
Weight typical 2 g
007
DSS 10-0045A
V
RSM
V
RRM
Type
V V
45 45 DSS 10-0045A
Symbol Conditions Characteristic Values
typ. max.
IR TVJ = 25°C VR= V
RRM
0.3 mA
TVJ = 125°C VR= V
RRM
2.5 mA
V
F
IF = 10 A; TVJ = 125°C 0.58 V IF = 10 A; TVJ = 25°C 0.68 V IF = 20 A; TVJ = 125°C 0.70 V
R
thJC
1.7 K/W
R
thCH
0.5 K/W
I
FAV
= 10 A
V
RRM
= 45 V
V
F
= 0.58 V
© 2000 IXYS All rights reserved
2 - 2
0.0 0.2 0.4 0.6 0.8 1.0
1
10
100
0 1020304050
0.0001
0.001
0.01
0.1
1
10
515250102030
0
5
10
15
20
25
30
0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
04080120160
0
5
10
15
20
25
30
35
40
I
F(AV)
T
C
°C
I
F(AV)
t
s
K/W
10 100 1000 10000
100
1000
10000
I
FSM
t
P
A
0 1020304050
100
1000
C
T
I
R
I
F
A
V
F
V
R
V
R
V
pF
V
mA
A
P
(AV)
W
Z
thJC
V
Single Pulse
(Thermal Resistance)
DSS 10-0045A
A
µs
TVJ=175°C
150°C
125°C
100°C
50°C
25°C
T
VJ
=
175°C 150°C 125°C
25°C
TVJ= 25°C
d=0.5
d = DC
0.5
0.33
0.25
0.17
0.08
75°C
DC
0.08
D=0.5
0.33
0.25
0.17
DSS 10-0045A
007
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
Fig. 2 Typ. value of reverse current I
R
versus reverse voltage V
R
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current I
F(AV)
versus case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
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