IXYS DSP8-12AC, DSP8-08AC Datasheet
ADVANCE TECHNICAL INFORMATION
DSP 8
Phase-leg Rectifier Diode
ISOPLUS220
TM
V
RRM
I
F(AV)M
Electrically Isolated Back Surface
ISOPLUS220
V
V V
900 800 DSP 8-08AC
1300 1200 DSP 8-12AC
Symbol Test Conditions Maximum Ratings
I
FRMS
I
F(AV)M
I
FSM
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 50 A2s
T
VJ
T
VJM
T
stg
T
L
V
ISOL
F
C
Weight 2g
RSM
V
Type
RRM
1 2 3
TVJ = T
VJM
T
= 100°C; 180° sine 2 x 11 A
case
30 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 100 A
t = 8.3 ms (60 Hz), sine 105 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 85 A
t = 8.3 ms (60 Hz), sine 90 A
t = 8.3 ms (60 Hz), sine 45 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 35 A2s
t = 8.3 ms (60 Hz), sine 30 A2s
-40...+150 °C
150 °C
-55...+150 °C
1.6 mm (0.063 in) from case for 10 s 260 °C
50/60 Hz RMS; I
Mounting Force 11...65 / 2.5..15 N/lb
≤ 1 mA 2500 V~
ISOL
* Patent pending
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
For single and three phase bridge
configuration
l
Low cathode to tab capacitance (<15pF)
l
Planar passivated chips
l
Epoxy meets UL 94V-0
ISOPLUS220 Outline
= 800/1200 V
=2 x 11 A
TM
1
2
3
Isolated back surface *
Symbol Test Conditions Characteristic Values
Q
I
R
VR= V
= 25°C ≤ 10 µA
RRM; TVJ
TVJ = 150°C ≤ 0.7 mA
R
V
F
IF = 10 A; TVJ = 25°C ≤ 1.22 V
TVJ = 125°C ≤ 1.26 V
V
T0
r
T
R
thJC
R
thCK
For power-loss calculations only 0.8 V
TVJ = T
VJM
41 mΩ
DC current 1.8 K/W
DC current (with heatsink compound) typ. 0.6 K/W
a Maximum allowable acceleration 100 m/s
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified
Q Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
RPulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
2
98820 (04/01)
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