IXYS DSI45-16A, DSI45-12A, DSI45-08A, DSI45-16AR Datasheet

DSI 45

Rectifier Diode

V

V V

900 800 DSI 45-08A
1300 1200 DSI 45-12A
1700 1600 DSI 45-16A DSI 45-16AR

Symbol Test Conditions Maximum Ratings
I

F(AV)M

I

FSM

2

t TVJ= 45°C; t = 10 ms (50 Hz), sine 1120 A2s

I

T

VJ

T

VJM

T

stg

Md * mounting torque 0.8...1.2 Nm
V

ISOL

RSM

V

RRM

Type

A

TC= 105°C; 180° sine 48 A
TVJ= 45°C; t = 10 ms (50 Hz), sine 475 A

VR= 0 V; t = 8.3 ms (60 Hz), sine 520 A
T

= 150°C; t = 10 ms (50 Hz), sine 380 A

VJ

VR= 0 V; t = 8.3 ms (60 Hz), sine 420 A

VR= 0 V; t = 8.3 ms (60 Hz), sine 1120 A2s
TVJ= 150°C; t = 10 ms (50 Hz), sine 720 A2s

VR= 0 V; t = 8.3 ms (60 Hz), sine 720 A2s

-40...+150 °C
150 °C

-40...+150 °C

** 50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500 V~

V

RRM

I

F(AV)M

TO-247 AD ISOPLUS 247

C

Version A Version AR

C

A

A = Anode, C = Cathode

= 800-1600 V
= 48 A

C

C (TAB)

A

Features

●

International standard package

●

Planar glassivated chips

●

Version AR isolated and
UL registered E153432

●

Epoxy meets UL 94V-0

Applications

●

Supplies for DC power equipment

●

DC supply for PWM inverter

●

Field supply for DC motors

●

Battery DC power supplies

Advantages

●

Space and weight savings

●

Simple mounting

●

Improved temperature and power
cycling

●

Reduced protection circuits

Dimensions in mm (1 mm = 0.0394")

TM

TAB

Weight typical 6 g

* Verson A only; ** Version AR only

Symbol Test Conditions Characteristic Values
I

R

V

F

V

T0

r

T

R

thJC

R

thCH

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.

TVJ= T
IF= 40 A; TVJ = 25°C £ 1.18 V
For power-loss calculations only 0.8 V

TVJ= T
DC current 0.55 K/W

typical 0.2 K/W

; VR = V

VJM

VJM

RRM

£ 3mA

8mW

© 2000 IXYS All rights reserved

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D* 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

* ISOPLUS 247

TM

without hole

028

1 - 2

DSI 45

70

A

60

I

F

50

TVJ=150°C
TVJ= 25°C

40

30

20

10

0

0.00.40.81.21.6

V

V

F

Fig. 1 Forward current versus voltage

drop per diode

100

W

80

P

tot

60

4

10

VR = 0 V

2

s

A

I2t

T

= 45°C

10

3

VJ

I

FSM

500

50Hz, 80% V

A

400

300

T

VJ

RRM

= 45°C

200

T

= 150°C

T

= 150°C

100

VJ

0

0.001 0.01 0.1 1

s

10

2

VJ

23456789110

t

Fig. 2 Surge overload current Fig. 3 I2t versus time per diode

50

R

:

thHA

0.5 K/W

1.0 K/W

1.5K/W

2.0 K/W

3.0 K/W

4.0 K/W

6.0 K/W

I

F(AV)M

A

40

30

ms

t

40

20

0

0 10203040

I

d(AV)M

0 20 40 60 80 100 120 14 0

A

T

amb

°C °C

Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°

0.6

K/W

Z

thJC

0.4

0.2

0.0

0.001 0.01 0.1 1 10

Fig. 6 Transient thermal impedance junction to case

t

DSI45

s

20

10

0

0 20 40 60 80 100 120 140

T

C

Fig. 5 Max. forward current versus

case temperature

Constants for Z

iR

calculation:

thJC

(K/W) ti (s)

thi

1 0.1633 0.016
2 0.2517 0.118
3 0.0933 0.588
4 0.04167 2.6

© 2000 IXYS All rights reserved

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