IXYS DSI35-12A, DSI35-08A, DSAI35-18A, DSAI35-16A, DSAI35-12A Datasheet
...
DS 35 DSI 35
DSA 35 DSAI 35
Rectifier Diode
Avalanche Diode
V
RSM
V V V on stud on stud
900 - 800 DS
1300 - 1200 DS 35-12A DSI 35-12A
1300 1300 1200 DSA 35-12A DSAI 35-12A
1700 1750 1600 DSA 35-16A DSAI 35-16A
1900 1950 1800 DSA 35-18A DSAI 35-18A
① Only for Avalanche Diodes
Symbol Test Conditions Maximum Ratings
I
F(RMS)
I
F(AVM)
P
RSM
I
FSM
2
t TVJ= 45°C t = 10 ms (50 Hz), sine 2100 A2s
I
T
VJ
T
VJM
T
stg
M
d
Weight 15 g
V
ÿ
① V
(BR)min
TVJ= T
T
RRM
VJM
= 100°C; 180° sine 49 A
case
DSA(I) types, TVJ = T
Anode Cathode
35-08A DSI 35-08A
80 A
, tp = 10 ms11kW
VJM
TVJ= 45°C; t = 10 ms (50 Hz), sine 650 A
VR= 0 t = 8.3 ms (60 Hz), sine 690 A
TVJ= T
VR= 0 t = 8.3 ms (60 Hz), sine 640 A
VJM
t = 10 ms (50 Hz), sine 600 A
VR= 0 t = 8.3 ms (60 Hz), sine 2000 A2s
TVJ= T
VR= 0 t = 8.3 ms (60 Hz), sine 1700 A2s
VJM
t = 10 ms (50 Hz), sine 1800 A2s
-40...+180 °C
180 °C
-40...+180 °C
Mounting torque 4.5-5.5 Nm
40-49 lb.in.
V
RRM
I
F(RMS)
I
F(AV)M
= 800-1800 V
= 80 A
= 49 A
DO-203 AB
C
A
A = Anode C = Cathode
DS DSI
DSA DSAI
A
C
1/4-28UNF
Features
●
International standard package,
JEDEC DO-203 AB (DO-5)
●
Planar glassivated chips
Applications
●
High power rectifiers
●
Field supply for DC motors
●
Power supplies
Advantages
●
Space and weight savings
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a Max. allowable acceleration 100 m/s
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
TVJ= T
IF= 150 A; TVJ = 25°C £ 1.55 V
For power-loss calculations only 0.85 V
TVJ= T
DC current 1.05 K/W
DC current 1.25 K/W
Creepage distance on surface 4.05 mm
Strike distance through air 3.9 mm
; VR = V
VJM
VJM
RRM
£ 4mA
4.5 mW
© 2000 IXYS All rights reserved
2
1 - 2
DS 35 DSI 35
DSA 35 DSAI 35
I
FSM
1000
900
800
700
600
500
400
300
200
50Hz, 80% V
A
T
VJ
RRM
= 180°C
T
VJ
= 45°C
250
A
typ. lim.
200
I
F
150
TVJ= 180°C
TVJ= 25°C
100
50
100
0
0.5 1.0 1.5 2.0
V
F
V
0
10
-3
10
-2
10
-1
Fig. 1 Forward characteristics Fig. 2 Surge overload current
I
: crest value, t: duration
FSM
100
W
80
P
F
60
R
1.5 K/W
1.9 K/W
2.3 K/W
3.9 K/W
t
thJA
10000
VR = 0 V
8000
A2s
6000
I2t
4000
2000
T
= 45°C
VJ
T
= 180°C
VJ
1000
0
s
10
23456789110
ms
t
Fig. 3 I2t versus time (1-10 ms)
60
A
:
I
F(AV)M
50
40
30
40
20
0
0 20406080
DC
180° sin
120°
60°
30°
I
F(AV)M
0
0 50 100 150 200
A
T
amb
°C
20
10
0
0 40 80 120 160 200
T
c
ase
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature 180° sine
2.0
K/W
1.6
Z
thJH
1.2
R
for various conduction angles d:
thJH
dR
thJH
(K/W)
DC 1.25
180° 1.37
120° 1.47
60° 1.74
0.8
0.4
30° 2.08
Constants for Z
iR
thi
calculation:
thJH
(K/W) ti (s)
1 0.10 0.0012
0.0
10
-3
10
-2
10
-1
10
0
Fig. 6 Transient thermal impedance junction to heatsink
10
1
s
10
t
2 0.25 0.1181
2
3 0.70 0.6540
4 0.20 2.0
°C
© 2000 IXYS All rights reserved
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