Page 1
DSI30-12A
Single Diode
Standard Rectifier
Part number
DSI30-12A
=
V
RRM
I
FAV
V V1,25
F
1200
=
30
=
Backside: cathode
V
A
13
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
TO-220
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
20150402bData according to IEC 60747and per semiconductor unless otherwise specified
Page 2
DSI30-12A
Symbol
Definition
typ.
max.
min.
F
Conditions
Unit
F
Rectifier
Ratings
V
V
I
V
I
V
r
R
R
P
I
I²t
C
R
FAV
F
FSM
RSM
RRM
F
F0
thJC
thCH
tot
J
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
forward voltage drop
V = V
R
R
I = A
I = AF60
I = A
I = AF60
average forward current
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
T = °C
C
t = 10 ms; (50 Hz), sine T = 45°C
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
R
1200
1200
30
30
130
d =rectangular 0.5
T = 25°C
VJ
T = 25°C
VJ
VJ
T = °C
150
VJ
T = 25°C
VJ
150
VJ
T = °C
175
VJ
175
VJ
C
VJ
V = 0 V
R
T = °C
150
VJ
V = 0 V
R
T = 45°C
VJ
V = 0 V
R
T = °C150
VJ
V = 0 V
R
VJ
0,50
10
1300
40T = 25°C
1,29
1,60
1,66
30
14,1
0,9 K/W
160 WT = 25°C
300
325
255
275
450
440
325
315
V
V1200
µA
mA1,5V = V
V
V
V1,25T = °C
V
A
V0,82T = °C
mΩ
K/W
A
A
A
A
A²s
A²s
A²s
A²s
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
20150402bData according to IEC 60747and per semiconductor unless otherwise specified
Page 3
DSI30-12A
Product Marking
Assembly Line
Package
Symbol
Definition
typ.
max.
min.
Conditions
Unit
TO-220
I
Ratings
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
Part Number
Date Code
RMS current
virtual junction temperature
operation temperature
storage temperature
mounting torque
mounting force with clip
XXXXXX
Logo
Lot #
Zyyww
abcdef
per terminal
35 A
-40
150-40
-40
°C175
°C
°C150
g2
0,4
20
Nm0,6
N60
DSI30-12A 476390Tube 50DSI30-12AStandard
Similar Part Package Voltage class
DSI30-08A TO-220AC (2) 800
DSI30-08AS TO-263AB (D2Pak) (2) 800
DSI30-08AC
DSI30-12AS
DSI30-12AC
DSI30-16A
DSI30-16AS
Equivalent Circuits for Simulation
V
V
0 max
R
0 max
IXYS reserves the right to change limits, conditions and dimensions.
R
0
0
threshold voltage
slope resistance *
© 2015 IXYS all rights reserved
Rectifier
11
ISOPLUS220AC (2)
TO-263AB (D2Pak) (2)
ISOPLUS220AC (2)
TO-220AC (2)
TO-263AB (D2Pak) (2)
* on die level
T =
VJ
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
800
1200
1200
1600
1600
175 °C
V0,82
mΩ
20150402bData according to IEC 60747and per semiconductor unless otherwise specified
Page 4
DSI30-12A
Outlines TO-220
ØP
2x b2
2x b
= supplier option
E
4
1 3
e
L1
Q
D
L
H1
C
A2
A
A1
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 5.08 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
13
20150402bData according to IEC 60747and per semiconductor unless otherwise specified
Page 5
DSI30-12A
2
50
5
00
60
Rectifier
50
40
I
F
30
[A]
TVJ= 125°C
20
150°C
10
TVJ= 25°C
0
0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF[V]
Fig. 1 Forward current versus
voltage drop per diode
50
DC =
P
tot
[W]
40
30
20
10
1
0.5
0.4
0.33
0.17
0.08
50 Hz, 80% V
200
I
FSM
[A]
150
TVJ= 150°C
100
0.001 0.01 0.1 1
t [s]
Fig. 2 Surge overload current
TVJ= 45°C
0.6 K/W
0.8 K/W
1 K/W
2 K/W
4 K/W
8 K/W
RRM
VR= 0 V
400
300
TVJ= 45°C
I2t
200
[A2s]
100
0
TVJ= 150°C
2 3 4 5 6 7 8 9
011
t [ms]
Fig. 3 I2t versus time per diode
I
F(AV)M
[A]
40
30
20
10
DC =
1
0.5
0.4
0.33
0.17
0.08
R
:
thHA
0
0 10 20 30
I
[A]
F(AV)M
0 50 100 150 200
T
[°C]
amb
Fig. 4 Power dissipation vs. direct output current and ambient temperature
1.0
0.8
0.6
Z
thJC
0.4
[K/W]
0.2
0.0
1 10 100 1000 10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
0
0 50 100 150 200
TC[°C]
Fig. 5 Max. forward current vs.
case temperature
Constants for Z
i R
(K/W) ti(s)
thi
calculation:
thJC
1 0.03 0.0004
2 0.08 0.002
3 0.2 0.003
4 0.39 0.03
5 0.2 0.29
IXYS reserves the right to change limits, conditions and dimensi ons.
© 2015 IXYS all rights reserved
20150402bData according to IEC 60747and per semiconductor unless otherwise specified
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