IXYS DSI2X55-16A, DSI2X55-12A Datasheet
DSI 2x55
Rectifier Diode
V
RSM
VV
1300 1200 DSI 2x55-12A
1700 1600 DSI 2x55-16A
Symbol Conditions Maximum Ratings (per diode)
I
FRMS
I
F(AV)M
I
FSM
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 2210 A2s
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight 30 g
V
RRM
Type
120 A
TC = 80°C; 180° sine 56 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 650 A
t = 8.3 ms(60 Hz), sine 700 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 570 A
t = 8.3 ms(60 Hz), sine 610 A
t = 8.3 ms(60 Hz), sine 2060 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 1620 A2s
t = 8.3 ms(60 Hz), sine 1560 A2s
-40...+150 °C
150 °C
-40...+150 °C
TC = 25°C 190 W
50/60 Hz, RMS 2500 V~
I
£ 1 mA
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
I
F(AV)M
V
= 2x 56 A
= 1200-1600 V
RRM
miniBLOC, SOT-227 B
E72873
Features
●
International standard package
miniBLOC (ISOTOP compatible)
●
Isolation voltage 2500 V~
●
2 independent rectifier diodes in one
package
●
Planar passivated chips
Applications
●
Input rectifier diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
miniBLOC, SOT-227 B
Symbol Conditions Characteristic Values (per diode)
typ. max.
I
R
V
F
V
T0
r
T
R
thJC
R
thCH
TVJ = 25°CVR = V
TVJ = 150°C5mA
RRM
0.3 mA
IF = 60 A; TVJ = 125°C 1.25 V
TVJ = 25°C 1.20 V
For power-loss calculations only 0.8 V
TVJ = T
VJM
8mW
0.65 K/W
0.1 K/W
Data according to IEC 60747
© 2000 IXYS All rights reserved
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0 .76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08
008
1 - 2
DSI 2x55
4
10
VR = 0 V
2
s
A
I2t
T
= 45°C
VJ
3
10
T
= 150°C
VJ
I
FSM
500
50Hz, 80% V
A
400
300
T
= 45°C
VJ
RRM
80
A
70
60
I
F
TVJ=125°C
TVJ= 25°C
50
40
30
200
20
100
T
VJ
= 150°C
10
0
0.00.40.81.21.6
V
V
F
Fig. 1 Forward current versus voltage
0
0.001 0.01 0.1 1
s
t
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
drop per diode
180
W
160
R
140
P
tot
120
100
80
thHA
0.1 K/W
0.5 K/W
1.0 K/W
2.0 K/W
4.0 K/W
7.0 K/W
:
60
40
20
0
0 20406080100
I
F(AV)M
A
0 20 40 60 80 100 120 140
T
amb
°C °C
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
0.8
2
10
23456789110
ms
t
80
A
70
I
F(AV)M
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
T
C
Fig. 5 Max. forward current versus case
temperature, sine180°
K/W
Z
thJC
0.6
0.4
0.2
0.0
0.001 0.01 0.1 1 10
Fig. 6 Transient thermal impedance junction to case
t
© 2000 IXYS All rights reserved
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.031 0.00024
2 0.0554 0.0036
3 0.114 0.0235
4 0.281 0.142
DSI 2x55
s
5 0.1686 0.7
2 - 2
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