DSEP 9-06CR
HiPerFREDTM Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
Preliminary Data
V
RSM
V V
600 600 DSEP 9-06CR
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
Weight typical 6 g
V
RRM
Type
A
13 A
TC = 95°C; rectangular, d = 0.5 9 A
tP < 10 µs; rep. rating, pulse width limited by T
VJM
tbd A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 80 A
TVJ = 25°C; non-repetitive 0.5 mJ
IAS = 2 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A
-55...+175 °C
175 °C
-55...+150 °C
TC = 25°C 60 W
50/60 Hz RMS; I
≤ 1 mA 2.5 kV
ISOL
I
FAV
V
t
rr
ISOPLUS 247
C
RRM
=9 A
= 600 V
= 15 ns
TM
C
A
Isolated back surface *
A = Anode, C = Cathode
* Patent pending
Features
●
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
●
Low cathode to tab capacitance (<25pF)
●
International standard package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
●
Epoxy meets UL 94V-0
●
Isolated and UL registered E153432
Symbol Conditions Characteristic Values
typ. max.
① TVJ = 25°C VR= V
I
R
TVJ = 150°C VR= V
V
② IF = 9 A; TVJ= 150°C 2.9 V
F
RRM
RRM
50 µA
0.2 mA
TVJ= 25°C 4.0 V
R
thJC
R
thCH
t
rr
IF = 1 A; -di/dt = 200 A/µs; 15 ns
0.25 K/W
2.5 K/W
VR = 30 V; TVJ = 25°C
I
RM
VR = 100 V; IF = 10 A; -diF/dt = 100 A/µs 2.0 A
TVJ = 100°C
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 1999 IXYS All rights reserved
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low EMI/RFI
●
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see IXYS CD 2000
945
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