IXYS DSEP9-06CR Datasheet

DSEP 9-06CR
HiPerFREDTM Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
Preliminary Data
V
RSM
V V
600 600 DSEP 9-06CR
Symbol Conditions Maximum Ratings I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
Weight typical 6 g
V
RRM
Type
A
13 A TC = 95°C; rectangular, d = 0.5 9 A tP < 10 µs; rep. rating, pulse width limited by T
VJM
tbd A TVJ = 45°C; tp = 10 ms (50 Hz), sine 80 A TVJ = 25°C; non-repetitive 0.5 mJ
IAS = 2 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A
-55...+175 °C 175 °C
-55...+150 °C
TC = 25°C 60 W 50/60 Hz RMS; I
1 mA 2.5 kV
ISOL
I
FAV
V t
rr
ISOPLUS 247
C
RRM
=9 A = 600 V = 15 ns
TM
C
A
Isolated back surface *
A = Anode, C = Cathode * Patent pending
Features
Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<25pF)
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Isolated and UL registered E153432
Symbol Conditions Characteristic Values
typ. max.
TVJ = 25°C VR= V
I
R
TVJ = 150°C VR= V
V
IF = 9 A; TVJ= 150°C 2.9 V
F
RRM RRM
50 µA
0.2 mA
TVJ= 25°C 4.0 V
R
thJC
R
thCH
t
rr
IF = 1 A; -di/dt = 200 A/µs; 15 ns
0.25 K/W
2.5 K/W
VR = 30 V; TVJ = 25°C
I
RM
VR = 100 V; IF = 10 A; -diF/dt = 100 A/µs 2.0 A TVJ = 100°C
Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions. © 1999 IXYS All rights reserved
Applications
Antiparallel diode for high frequency switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters and motor control circuits
Rectifiers in switch mode power supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see IXYS CD 2000
945
1 - 1
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