IXYS DSEP8-03A Datasheet
DSEP 8-03A
HiPerFREDTM Epitaxial Diode
with soft recovery
V
RSM
V V
300 300 DSEP 8-03A
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight typical 2 g
Symbol Conditions Characteristic Values
IR① TVJ = 25°C VR= V
VF② IF = 10 A; TVJ= 150°C 1.29 V
R
thJC
R
thCH
t
rr
I
RM
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
V
RRM
Type
A
35 A
TC = 130°C; rectangular, d = 0.5 10 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 60 A
TVJ = 25°C; non-repetitive 0.5 mJ
IAS = 2 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A
-55...+175 °C
175 °C
-55...+150 °C
TC = 25°C 60 W
mounting torque 0.4...0.6 Nm
typ. max.
60 mA
0.25 mA
TVJ = 150°C VR= V
RRM
RRM
TVJ= 25°C 1.75 V
2.5 K/W
0.5 K/W
IF = 1 A; -di/dt = 50 A/ms; 30 ns
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 12 A; -diF/dt = 100 A/ms2.4A
TVJ = 100°C
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
I
FAV
V
t
rr
TO-220 AC
C
A = Anode, C = Cathode, TAB = Cathode
RRM
C
= 10 A
= 300 V
= 30 ns
A
Features
●
International standard package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
●
Epoxy meets UL 94V-0
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low
EMI/RFI
●
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
C (TAB)
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
025
1 - 2
DSEP 8-03A
30
A
I
F
20
T
VJ
T
VJ
T
VJ
=150°C
=100°C
= 25°C
10
0
0.0 0.5 1.0 1.5 2.0
V
F
Fig. 1 Forward current IF versus V
1.4
1.2
K
f
1.0
I
RM
Q
0.8
r
400
T
= 100°C
VJ
nC
V
= 150V
R
300
Q
r
IF = 20A
= 10A
200
I
F
I
= 5A
F
15
T
= 100°C
VJ
= 150V
V
R
A
I
RM
IF = 20A
10
= 10A
I
F
I
= 5A
F
5
100
0
V
100 1000
A/ms
-diF/dt
F
Fig. 2 Reverse recovery charge Q
versus -diF/dt
70
ns
t
60
rr
50
T
VJ
V
R
I
F
I
F
I
F
= 100°C
= 150V
= 20A
= 10A
= 5A
r
40
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF/dt
16
V
t
fr
12
V
FR
8
4
T
I
V
FR
A/ms
/dt
F
= 100°C
VJ
= 10A
F
RM
0.8
µs
0.6
t
fr
0.4
0.2
0.6
0 40 80 120 160
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus T
VJ
°C
RM
30
200 600 10000 400 800
-di
A/ms
/dt
F
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
10
K/W
1
Z
thJC
0.1
0.01
0.001
0.00001 0.0001 0.001 0.01 0.1 1
s
t
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
DSEP 8-03A
0
0 200 400 600 800 1000
A/ms
diF/dt
versus diF/dt
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 1.449 0.005
2 0.558 0.0003
3 0.493 0.017
0.0
fr
025
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