IXYS DSEP6-06AS Datasheet
DSEP 6-06AS
HiPerFREDTM Epitaxial Diode
with soft recovery
Preliminary Data
V
RSMVRRM
V V on product
600 600 DSEP 6-06AS 6P060AS
Symbol Conditions Maximum Ratings
I
FRMS
I
① TC = 152°C; rectangular, d = 0.5 6 A
FAVM
I
FRM
I
FSM
A
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
Weight typ. 0.3 g
Symbol Conditions Characteristic Values
I
R
V
F
R
thJC
t
rr
I
RM
① I
rating includes reverse blocking losses
FAVM
at T
, VR = 0.6 V
VJM
Data according to IEC 60747
Type Marking
TVJ = T
VJM
tP < 10 µs; rep. rating, pulse width limited by T
VJM
A
26 A
12 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 40
TVJ = 25°C; non-repetitive 0.1 mJ
IAS = 0.8 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A
-40...+175 °C
175 °C
-40...+150 °C
TC = 25°C 55 W
typ. max.
TVJ = 25°C VR= V
TVJ = 150°C VR= V
RRM
RRM
50 µA
0.2 mA
IF = 6 A; TVJ= 150°C 1.33 V
TVJ= 25°C 2.02 V
2.8 K/W
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C 20 tbd ns
VR = 100 V; IF = 10 A; -diF/dt = 100 A/µs 3.5 4.4 A
TVJ = 100°C
, duty cycle d = 0.5
RRM
RRM
Cathode
=6 A
= 600 V
= 20 ns
Anode
I
FAVM
V
t
rr
TO-252AA (DPAK)
C
Features
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
Applications
●
Anti saturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
●
Low losses
●
Operating at lower temperature or
space saving by reduced cooling
Dimensions see outlines.pdf
Cathode
(Flange)
© 2000 IXYS All rights reserved
030
1 - 2
DSEP 6-06AS
10
A
8
I
F
T
=150°C
VJ
6
T
VJ
T
VJ
=100°C
= 25°C
4
2
0
0.0 0.5 1.0 1.5 2.0
V
F
Fig. 1 Forward current IF versus V
2.0
1.6
K
f
1.2
0.8
0.4
I
RM
Q
r
0.0
0 40 80 120 160
°C
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus T
VJ
1000
T
= 100°C
VJ
nC
V
R
= 300V
800
Q
r
600
IF = 12A
= 6A
I
400
F
I
= 3A
F
30
T
= 100°C
VJ
= 300V
V
R
A
I
RM
20
IF = 12A
= 6A
I
F
I
= 3A
F
10
200
0
V
100 1000
A/ms
-diF/dt
F
Fig. 2 Reverse recovery charge Q
versus -diF/dt
110
ns
100
t
rr
90
T
V
VJ
R
I
= 12A
F
I
= 6A
F
= 3A
I
F
r
= 100°C
= 300V
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF/dt
20
V
t
fr
15
V
FR
10
V
F
FR
/dt
A/ms
RM
1.2
µs
0.9
t
fr
0.6
80
70
60
200 600 10000 400 800
RM
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
-di
A/ms
/dt
F
5
T
= 100°C
VJ
= 6A
I
F
0
0 200 400 600 800 1000
A/ms
diF/dt
versus diF/dt
0.3
0.0
fr
10
K/W
1
Z
thJC
0.1
0.01
0.001
0.00001 0.0001 0.001 0.01 0.1 1
s
t
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
DSEP 6-06AS
030
2 - 2
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