IXYS DSEP60-06A, DSEP60-06AT Datasheet

DSEP 60-06A
DSEP 60-06AT

HiPerFREDTM Epitaxial Diode

with soft recovery

Preliminary Data

V

RSM

V V

600 600 DSEP 60-06A DSEP 60-06AT

Symbol Conditions Maximum Ratings
I

FRMS

I

FAVM

I

FSM

E

AS

I

AR

T

VJ

T

VJM

T

stg

P

tot

M

d

Weight typical 6 g

Symbol Conditions Characteristic Values

IR① TVJ = 25°C VR= V

VF② IF = 60 A; TVJ= 150°C 1.39 V

R

thJC

R

thCH

t

rr

I

RM

Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %

V

RRM

TVJ = T

Type

VJM

A

70 A

TC = 110°C; rectangular, d = 0.5 60 A

TVJ = 45°C; tp = 10 ms (50 Hz), sine 600 A
TVJ = 25°C; non-repetitive 0.3 mJ

IAS = 1.6 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A

-55...+175 °C
175 °C

-55...+150 °C

TC = 25°C 230 W
mounting torque 0.8...1.2 Nm

typ. max.

650 mA

2.5 mA

TVJ = 150°C VR= V

RRM
RRM

TVJ= 25°C 2.04 V

0.65 K/W

0.25 K/W

IF = 1 A; -di/dt = 300 A/ms; 35 ns
VR = 30 V; TVJ = 25°C

VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms8.3A
TVJ = 100°C

② Pulse Width = 300 ms, Duty Cycle < 2.0 %

I

FAV

V
t

rr

TO-247 AD TO-268 AA

C

(A-Type) (AT-Type)

C

A = Anode, C = Cathode, TAB = Cathode

RRM

A

= 60 A
= 600 V
= 35 ns

A

C (TAB)

Features

●

International standard package

●

Planar passivated chips

●

Very short recovery time

●

Extremely low switching losses

●

Low IRM-values

●

Soft recovery behaviour

●

Epoxy meets UL 94V-0

Applications

●

Antiparallel diode for high frequency
switching devices

●

Antisaturation diode

●

Snubber diode

●

Free wheeling diode in converters
and motor control circuits

●

Rectifiers in switch mode power
supplies (SMPS)

●

Inductive heating

●

Uninterruptible power supplies (UPS)

●

Ultrasonic cleaners and welders

Advantages

●

Avalanche voltage rated for reliable
operation

●

Soft reverse recovery for low
EMI/RFI

●

Low IRM reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating
switch

Dimensions see outlines.pdf

A

C (TAB)

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.

© 2000 IXYS All rights reserved

018

1 - 2

DSEP 60-06A
DSEP 60-06AT

160

A

140
120

I

F

100

TVJ= 25°C
TVJ=100°C

80

TVJ=150°C

60
40
20

0

012

V

F

Fig. 1 Forward current IF versus V

2.0

1.5

K

f

1.0

I

RM

0.5

Q

r

0.0
0 40 80 120 160

T

VJ

Fig. 4 Dynamic parameters Qr, I

versus T

VJ

°C

RM

4000

TVJ= 100°C
VR = 300V

nC

3000

Q

r

IF=120A
IF= 60A
IF= 30A

2000

1000

0

V

100 1000

A/ms

-diF/dt

F

Fig. 2 Reverse recovery charge Q

versus -diF/dt

140

ns

TVJ= 100°C
VR = 300V

r

130

t

rr

120

IF=120A

80

TVJ= 100°C
VR = 300V

A
60

I

RM

IF=120A
IF= 60A

40

IF= 30A

20

0

200 600 10000 400 800

-di

Fig. 3 Peak reverse current I

versus -diF/dt

20

V

V

FR

15

t

fr

V

F

/dt

FR

A/ms

RM

1.6
µs

t

fr

1.2

IF= 60A

110

IF= 30A

10

0.8

100

90

5

TVJ= 100°C

0.4

IF = 60A

80

200 600 10000 400 800

-di

A/ms

/dt

F

Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t

0

0 200 400 600 800 1000

A/ms

diF/dt

versus diF/dt

0.0

fr

1

K/W

0.1

Z

thJC

0.01

0.001

0.0001

0.00001 0.0001 0.001 0.01 0.1 1

t

Fig. 7 Transient thermal resistance junction to case

NOTE: Fig. 2 to Fig. 6 shows typical values

© 2000 IXYS All rights reserved

DSEP 60-06A

s

Constants for Z

iR

calculation:

thJC

(K/W) ti (s)

thi

1 0.324 0.0052
2 0.125 0.0003
3 0.201 0.0385

018

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