IXYS DSEP30-12AR, DSEP30-12A Datasheet
DSEP 30-12A
DSEP 30-12AR
HiPerFREDTM Epitaxial Diode
with soft recovery
V
RSM
V V
1200 1200 DSEP 30-12A
1200 1200 DSEP 30-12AR
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
F
C
V
ISOL
Weight typical 6 g
* Version A only; ** Version AR only
Symbol Conditions Characteristic Values
I
R
VF② IF = 30 A; TVJ= 150°C 1.78 V
R
thJC
R
thCH
t
rr
I
RM
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
V
RRM
Type
A
70 A
rectangular, d = 0.5; TC (Vers. A) = 115°C 30 A
TC (Vers. AR)= 105°C
TVJ = 45°C; tp = 10 ms (50 Hz), sine 200 A
TVJ = 25°C; non-repetitive 14 mJ
IAS = 11.5 A; L = 180 µH
VA = 1.25·VR typ.; f = 10 kHz; repetitive 1.2 A
-55...+175 °C
175 °C
-55...+150 °C
TC = 25°C; Version A 165 W
Version AR 135 W
* mounting torque 0.8...1.2 Nm
mounting force with clip 20...120 N
** 50/60 Hz RMS; I
£ 1 mA; leads-to-tab 2500 V~
ISOL
typ. max.
① TVJ = 25°C;VR= V
TVJ = 150°C;VR= V
RRM
RRM
250 µA
1mA
TVJ= 25°C 2.74 V
Version A 0.9 K/W
Version AR 1.1 K/W
0.25 K/W
I
= 1 A; -di/dt = 200 A/µs; 40 ns
F
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs 5.5 11.4 A
TVJ = 100°C
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
I
FAV
V
t
rr
TO-247 AD ISOPLUS 247
C
Version A Version AR
C
A
= 30 A
= 1200 V
RRM
= 40 ns
C (TAB)
C
A
A = Anode, C = Cathode
Features
●
International standard package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
●
Epoxy meets UL 94V-0
●
Version ..R isolated and
UL registered E153432
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low
EMI/RFI
●
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
TM
TAB
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
018
1 - 2
DSEP 30-12A
DSEP 30-12AR
70
A
60
I
50
F
TVJ=150°C
TVJ=100°C
40
TVJ= 25°C
30
20
10
0
01234
V
V
F
Fig. 1 Forward current IF versus V
2.0
1.5
K
f
1.0
0.5
I
RM
Q
r
5
TVJ= 100°C
m
C
VR = 600V
4
Q
r
3
IF= 60A
IF= 30A
IF= 15A
2
I
RM
60
A
50
40
30
TVJ= 100°C
VR = 600V
IF= 60A
IF= 30A
IF= 15A
20
1
0
100 1000
A/ms
-diF/dt
F
Fig. 2 Reverse recovery charge Q
versus -diF/dt
220
ns
TVJ= 100°C
VR = 600V
r
200
t
rr
180
IF= 60A
10
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF/dt
120
V
V
FR
t
fr
80
TVJ= 100°C
IF = 30A
V
F
FR
/dt
A/ms
RM
1.2
µs
t
fr
0.8
IF= 30A
160
IF= 15A
40
0.4
140
0.0
0 40 80 120 160
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus T
2
VJ
°C
RM
120
200 600 10000 400 800
-di
A/ms
/dt
F
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
DSEP 30-12AR
1
K/W
Z
thJC
DSEP 30-12A
0.1
0.01
0.001
0.00001 0.0001 0.001 0.01 0.1 1
s
t
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
0
0 200 400 600 800 1000
A/ms
diF/dt
versus diF/dt
Constants for Z
iR
calculation ..A:
thJC
(K/W) ti (s)
thi
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
Constants for Z
iR
calculation ..AR:
thJC
(K/W) ti (s)
thi
1 0.368 0.0052
2 0.1417 0.0003
3 0.0295 0.0004
4 0.5604 0.0092
0.0
fr
018
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