IXYS DSEP30-06BR, DSEP30-06B, DSEP30-06A Datasheet
DSEP 30-06A
DSEP 30-06BR DSEP 30-06B
HiPerFREDTM Epitaxial Diode
with soft recovery
I
V
t
V
RSM
V V
600 600 DSEP 30-06A
600 600 DSEP 30-06B
600 600 DSEP 30-06BR
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
Md* mounting torque 0.8...1.2 Nm
F
C
V
ISOL
Weight typical 6 g
* Verson A only; ** Version BR only
Symbol Conditions Characteristic max. Values
IR① TVJ = 25°C VR= V
VF② IF = 30 A; TVJ= 150°C 1.25 1.56 V
R
thJC
R
thJC
R
thCH
trr typ. IF = 1 A; -di/dt = 200 A/ms; 35 30 ns
IRM typ. VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms6 4A
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
V
RRM
Type
A
70 A
rect., d = 0.5; TC (Vers. A) = 135°C 30 A
TC (Vers. B) = 125°C; TC (Vers. BR) = 115°C
TVJ = 45°C; tp = 10 ms (50 Hz), sine 250 A
TVJ = 25°C; non-repetitive 0.2 mJ
IAS = 1.3 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A
-55...+175 °C
175 °C
-55...+150 °C
TC = 25°C 165 W
(Vers. BR) 135 W
mounting force with clip 20...120 N
** 50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500 V~
Vers. A Vers. B
250 250 mA
12mA
TVJ = 150°C VR= V
RRM
RRM
TVJ= 25°C 1.60 2.51 V
0.9 0.9 K/W
Version BR 1.1 K/W
typ. 0.25 0.25 K/W
VR = 30 V; TVJ = 25°C
TVJ = 100°C
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
TO-247 AD ISOPLUS 247
C
Version A Version BR
C
A = Anode, C = Cathode
Features
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Applications
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Advantages
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Dimensions see outlines.pdf
FAV
rr
A
= 30 A
= 600 V
RRM
= 30/35 ns
C (TAB)
C
A
* Patent pending
Isolated
back surface *
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Version ..R isolated and
UL registered E153432
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
TM
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
031
1 - 3
DSEP 30-06A
70
A
60
I
50
F
TVJ=150°C
40
TVJ=100°C
30
20
TVJ=25°C
10
0
0.0 0.5 1.0 1.5 2.0
V
F
Fig. 1 Forward current IF versus V
2.0
1.5
K
f
1.0
I
RM
0.5
Q
r
0.0
0 40 80 120 160
°C
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus T
VJ
Q
3000
2500
r
2000
1500
nC
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
I
RM
50
A
40
30
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
20
1000
500
0
V
100 1000
A/ms
-diF/dt
F
Fig. 2 Reverse recovery charge Q
versus -diF/dt
130
ns
TVJ= 100°C
VR = 300V
r
120
t
rr
110
IF= 60A
IF= 30A
10
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF/dt
20
V
V
t
FR
fr
15
V
A/ms
/dt
F
RM
1.2
FR
µs
t
fr
0.9
IF= 15A
100
10
0.6
90
80
5
TVJ= 100°C
0.3
IF = 30A
70
200 600 10000 400 800
RM
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
-di
A/ms
/dt
F
0
0 200 400 600 800 1000
A/ms
diF/dt
versus diF/dt
0.0
fr
1
K/W
Constants for Z
iR
thi
calculation:
thJC
(K/W) ti (s)
1 0.465 0.0052
0.1
Z
thJC
0.01
0.001
0.00001 0.0001 0.001 0.01 0.1 1
DSEP30-06A DSEC60-06A
s
t
2 0.179 0.0003
3 0.256 0.0396
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
018
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