IXYS DSEP2X91-03A Datasheet
DSEP 2x 91-03A
HiPerFREDTM Epitaxial Diode
with soft recovery
Preliminary Data
V
RSM
V V
300 300 DSEP 2x 91-03A
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight typical 30 g
Symbol Conditions Characteristic Values
① TVJ = 25°C VR= V
I
R
VF② IF = 90 A; TVJ= 125°C 1.30 V
R
thJC
R
thCH
t
rr
I
RM
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
V
RRM
Type
100 A
TC = 65°C; rectangular, d = 0.5 90 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 1000 A
TVJ = 25°C; non-repetitive 2.1 mJ
IAS = 4 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.4 A
-40...+150 °C
150 °C
-40...+150 °C
TC = 25°C 200 W
50/60 Hz, RMS 2500 V~
I
£ 1 mA
ISOL
mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in.
terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.
typ. max.
1mA
4mA
TVJ = 150°C VR= V
RRM
RRM
TVJ= 25°C 1.72 V
0.60 K/W
0.1 K/W
IF = 1 A; -di/dt = 400 A/ms; 30 ns
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 200 A; -diF/dt = 100 A/ms5.4A
TVJ = 100°C
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
I
FAV
V
t
rr
= 2x 90 A
=300 V
RRM
= 30 ns
miniBLOC, SOT-227 B
Features
●
International standard package
miniBLOC
●
Isolation voltage 2500 V~
●
UL registered E 72873
●
2 independent FRED in 1 package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low
EMI/RFI
●
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
009
1 - 2
DSEP 2x 91-03A
160
A
120
I
F
TVJ=150°C
TVJ=100°C
80
TVJ= 25°C
40
0
012
Fig. 1 Forward current IF versus V
V
V
F
F
1.5
K
f
1.0
I
RM
1000
TVJ= 100°C
VR = 150V
nC
800
Q
r
600
IF= 180A
IF= 90A
400
IF= 45A
200
0
100 1000
-diF/dt
Fig. 2 Reverse recovery charge Q
versus -diF/dt
100
ns
90
t
rr
80
70
TVJ= 100°C
VR = 150V
IF= 180A
IF= 90A
IF= 45A
A/ms
30
TVJ= 100°C
VR = 150V
A
I
RM
20
IF= 180A
IF= 90A
IF= 45A
10
0
-di
F
A/ms
/dt
RM
0.9
200 600 10000400800
r
Fig. 3 Peak reverse current I
versus -diF/dt
15
TVJ= 100°C
V
V
t
FR
fr
10
IF = 90A
V
FR
µs
0.6
t
fr
0.5
r
60
Q
50
0.0
0 40 80 120 160
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus T
VJ
°C
RM
40
200 600 10000400800
-di
/dt
F
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
1
K/W
0.1
Z
thJC
0.01
0.001
0.0001
0.00001 0.000 1 0.001 0.01 0.1 1
t
Fig. 7 Transient thermal resistance junction to case
A/ms
DSEP 2x91-03B
s
5
0
0 200 400 600 800 1000
A/ms
diF/dt
versus diF/dt
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.212 0.0055
2 0.248 0.0092
3 0.063 0.0007
4 0.077 0.0391
0.3
0.0
fr
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
009
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