IXYS DSEP2X61-12A Datasheet
DSEP 2x 61-12A
HiPerFREDTM Epitaxial Diode
with soft recovery
V
RSM
V V
1200 1200 DSEP 2x 61-12A
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight typical 30 g
Symbol Conditions Characteristic Values
① TVJ = 25°C VR= V
I
R
VF② IF = 60 A; TVJ= 125°C 1.70 V
R
thJC
R
thCH
t
rr
I
RM
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
V
RRM
Type
100 A
TC = 80°C; rectangular, d = 0.5 60 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 800 A
TVJ = 25°C; non-repetitive 28 mJ
IAS = 16 A; L = 180 µH
VA = 1.25·VR typ.; f = 10 kHz; repetitive 1.6 A
-40...+150 °C
150 °C
-40...+150 °C
TC = 25°C 200 W
50/60 Hz, RMS 2500 V~
I
£ 1 mA
ISOL
mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in.
terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.
typ. max.
1mA
4mA
TVJ = 150°C VR= V
RRM
RRM
TVJ= 25°C 2.42 V
0.6 K/W
0.1 K/W
IF = 1 A; -di/dt = 400 A/ms; 40 ns
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 200 A; -diF/dt = 100 A/ms8 A
TVJ = 100°C
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
I
FAV
V
t
rr
= 2x 60 A
= 1200 V
RRM
= 40 ns
miniBLOC, SOT-227 B
Features
●
International standard package
miniBLOC
●
Isolation voltage 2500 V~
●
UL registered E 72873
●
2 independent FRED in 1 package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low
EMI/RFI
●
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
912
1 - 2
DSEP 2x 61-12A
100
A
80
I
F
TVJ=150°C
TVJ=100°C
60
TVJ= 25°C
40
20
0
0123
V
V
F
Fig. 1 Forward current IF versus V
2.0
1.5
K
f
1.0
I
RM
0.5
Q
r
0.0
0 40 80 120 160
°C
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus T
VJ
I
RM
120
A
80
40
TVJ= 100°C
VR = 600V
IF= 120A
IF= 60A
IF= 30A
15.0
TVJ= 100°C
m
C
VR = 600V
12.5
Q
r
10.0
IF= 120A
7.5
IF= 60A
IF= 30A
5.0
2.5
0.0
100 1000
A/ms
-diF/dt
F
Fig. 2 Reverse recovery charge Q
versus -diF/dt
300
ns
280
t
rr
TVJ= 100°C
VR = 600V
r
0
200 600 10000 400 800
-di
F
Fig. 3 Peak reverse current I
versus -diF/dt
60
V
V
FR
t
fr
40
V
FR
/dt
A/ms
RM
1.2
µs
t
fr
0.8
260
IF= 120A
240
IF= 60A
IF= 30A
20
0.4
220
TVJ= 100°C
IF = 60A
200
200 600 10000 400 800
RM
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
-di
A/ms
/dt
F
0
0 200 400 600 800 1000
A/ms
diF/dt
versus diF/dt
0.0
fr
1
K/W
0.1
Z
thJC
0.01
0.001
0.0001
0.00001 0.0001 0.001 0.01 0.1 1 10
t
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
DSEP 2x61-12A
s
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.212 0.0055
2 0.248 0.0092
3 0.063 0.0007
4 0.077 0.0391
912
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