IXYS DSEP2X61-03A Datasheet

DSEP 2x 61-03A

HiPerFREDTM Epitaxial Diode

with soft recovery

V

RSM

V V

300 300 DSEP 2x 61-03A

Symbol Conditions Maximum Ratings
I

FRMS

I

FAVM

I

FSM

E

AS

I

AR

T

VJ

T

VJM

T

stg

P

tot

V

ISOL

M

d

Weight typical 30 g

Symbol Conditions Characteristic Values

① TVJ = 25°C VR= V

I

R

VF② IF = 60 A; TVJ= 125°C 1.26 V

R

thJC

R

thCH

t

rr

I

RM

Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %

Data according to IEC 60747 and per diode unless otherwise specified

V

RRM

Type

100 A

TC = 75°C; rectangular, d = 0.5 60 A

TVJ = 45°C; tp = 10 ms (50 Hz), sine 600 A
TVJ = 25°C; non-repetitive 1.6 mJ

IAS = 4 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.4 A

-40...+150 °C
150 °C

-40...+150 °C

TC = 25°C 140 W
50/60 Hz, RMS 2500 V~

I

£ 1 mA

ISOL

mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in.
terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.

typ. max.

0.65 mA

2.5 mA

TVJ = 150°C VR= V

RRM
RRM

TVJ= 25°C 1.68 V

0.85 K/W

0.1 K/W

IF = 1 A; -di/dt = 300 A/ms; 30 ns
VR = 30 V; TVJ = 25°C

VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms4.8A
TVJ = 100°C

② Pulse Width = 300 ms, Duty Cycle < 2.0 %

I

FAV

V
t

rr

= 2x 60 A
= 300 V

RRM

= 30 ns

miniBLOC, SOT-227 B

Features

●

International standard package
miniBLOC

●

Isolation voltage 2500 V~

●

UL registered E 72873

●

2 independent FRED in 1 package

●

Planar passivated chips

●

Very short recovery time

●

Extremely low switching losses

●

Low IRM-values

●

Soft recovery behaviour

Applications

●

Antiparallel diode for high frequency
switching devices

●

Antisaturation diode

●

Snubber diode

●

Free wheeling diode in converters
and motor control circuits

●

Rectifiers in switch mode power
supplies (SMPS)

●

Inductive heating

●

Uninterruptible power supplies (UPS)

●

Ultrasonic cleaners and welders

Advantages

●

Avalanche voltage rated for reliable
operation

●

Soft reverse recovery for low
EMI/RFI

●

Low IRM reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating
switch

Dimensions see outlines.pdf

IXYS reserves the right to change limits, test conditions and dimensions.

© 2000 IXYS All rights reserved

025

1 - 2

DSEP 2x 61-03A

160

A

120

I

F

80

TVJ=150°C

=100°C

T

VJ

T

= 25°C

VJ

40

0

0.0 0.5 1.0 1.5 2.0

V

V

F

Fig. 1 Forward current IF versus V

1.4

1.2

K

f

1.0

0.8

0.6

I

RM

Q

r

800

T

= 100°C

VJ

nC

V

= 150V

R

600

Q

r

400

IF = 120A
I

= 60A

F

I

= 30A

F

25

T

= 100°C

VJ

A

V

= 150V

R

20

I

RM

15

IF = 120A
I

= 60A

F

= 30A

I

F

10

200

0

100 1000

A/ms

-diF/dt

F

Fig. 2 Reverse recovery charge Q

versus -diF/dt

90

ns

t

80

rr

70

T

VJ

V

R

= 120A

I

F

= 60A

I

F

I

= 30A

F

= 100°C

= 150V

r

60

5

0

200 600 10000 400 800

-di

Fig. 3 Peak reverse current I

versus -diF/dt

14

V

12

V

t

FR

fr

10

8

6

T
I

V

FR

A/ms

/dt

F

= 100°C

VJ

= 60A

F

RM

0.85
µs

0.80

t

fr

0.75

0.70

0.65

0.4
0 40 80 120 160

T

VJ

Fig. 4 Dynamic parameters Qr, I

versus T

VJ

°C

RM

50

200 600 10000 400 800

-di

A/ms

/dt

F

Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t

1

K/W

0.1

Z

thJC

0.01

0.001

0.0001

0.00001 0.0001 0.001 0.01 0.1 1 10

s

t

Fig. 7 Transient thermal resistance junction to case

DSEP 2x61-03A

4

0 200 400 600 800 1000

A/ms

diF/dt

versus diF/dt

Constants for Z

iR

calculation:

thJC

(K/W) ti (s)

thi

1 0.307 0.0055
2 0.353 0.009
3 0.089 0.0007
4 0.101 0.04

0.60

fr

NOTE: Fig. 2 to Fig. 6 shows typical values

© 2000 IXYS All rights reserved

025

2 - 2