IXYS DSEP 2x 60-12A Service Manual

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DSEP 2x 60-12A

HiPerFREDTM Epitaxial Diode

with soft recovery

V

RSM

V V

1200 1200 DSEP 2x 60-12A

Symbol Conditions Maximum Ratings
I

FRMS

I

FAVM

I

FSM

E

AS

I

AR

T

VJ

T

VJM

T

stg

P

tot

V

ISOL

M

d

Weight typical 30 g

Symbol Conditions Characteristic Values

① TVJ = 25°C VR= V

I

R

VF② IF = 60 A; TVJ= 125°C 1.70 V

R

thJC

R

thCH

t

rr

I

RM

Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %

Data according to IEC 60747 and per diode unless otherwise specified

V

RRM

Type

100 A

TC = 80°C; rectangular, d = 0.5 60 A

TVJ = 45°C; tp = 10 ms (50 Hz), sine 800 A
TVJ = 25°C; non-repetitive 28 mJ

IAS = 16 A; L = 180 µH
VA = 1.25·VR typ.; f = 10 kHz; repetitive 1.6 A

-40...+150 °C
150 °C

-40...+150 °C

TC = 25°C 200 W
50/60 Hz, RMS 2500 V~

I

≤ 1 mA

ISOL

mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in.
terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.

typ. max.

1mA
4mA

TVJ = 150°C VR= V

RRM
RRM

TVJ= 25°C 2.42 V

0.6 K/W

0.1 K/W

IF = 1 A; -di/dt = 400 A/µs; 40 ns
VR = 30 V; TVJ = 25°C

VR = 100 V; IF = 200 A; -diF/dt = 100 A/µs8 A
TVJ = 100°C

② Pulse Width = 300 µs, Duty Cycle < 2.0 %

I
V
t

FAV

rr

= 2x 60 A
= 1200 V

RRM

= 40 ns

miniBLOC, SOT-227 B

Features

●

International standard package
miniBLOC

●

Isolation voltage 2500 V~

●

UL registered E 72873

●

2 independent FRED in 1 package

●

Planar passivated chips

●

Very short recovery time

●

Extremely low switching losses

●

Low IRM-values

●

Soft recovery behaviour

Applications

●

Antiparallel diode for high frequency
switching devices

●

Antisaturation diode

●

Snubber diode

●

Free wheeling diode in converters
and motor control circuits

●

Rectifiers in switch mode power
supplies (SMPS)

●

Inductive heating

●

Uninterruptible power supplies (UPS)

●

Ultrasonic cleaners and welders

Advantages

●

Avalanche voltage rated for reliable
operation

●

Soft reverse recovery for low
EMI/RFI

●

Low IRM reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating
switch

Dimensions see Outlines.pdf

IXYS reserves the right to change limits, test conditions and dimensions.

© 2002 IXYS All rights reserved

227

1 - 2

DSEP 2x 60-12A

100

A
80

I

F

TVJ=150°C
TVJ=100°C

60

TVJ= 25°C

40

20

0

0123

V

V

F

Fig. 1 Forward current IF versus V

2.0

1.5

K

f

1.0

I

RM

0.5

Q

r

0.0
0 40 80 120 160

°C

T

VJ

Fig. 4 Dynamic parameters Qr, I

versus T

VJ

I

RM

120

A

80

40

TVJ= 100°C
VR = 600V

IF= 120A
IF= 60A
IF= 30A

15.0

TVJ= 100°C

µC

VR = 600V

12.5

Q

r

10.0

IF= 120A

7.5

IF= 60A
IF= 30A

5.0

2.5

0.0
100 1000

A/µs

-diF/dt

F

Fig. 2 Reverse recovery charge Q

versus -diF/dt

300

ns

280

t

rr

TVJ= 100°C
VR = 600V

r

0

200 600 10000 400 800

-di

F

Fig. 3 Peak reverse current I

versus -diF/dt

60

V

V

FR

t

fr

40

V

FR

/dt

A/µs

RM

1.2

µs

t

fr

0.8

260

IF= 120A

240

IF= 60A
IF= 30A

20

0.4

220

TVJ= 100°C
IF = 60A

200

200 600 10000 400 800

RM

Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t

-di

A/µs

/dt

F

0

0 200 400 600 800 1000

A/µs

diF/dt

versus diF/dt

0.0

fr

1

K/W

0.1

Z

thJC

0.01

0.001

0.0001

0.00001 0.0001 0.001 0.01 0.1 1 10
t

Fig. 7 Transient thermal resistance junction to case

NOTE: Fig. 2 to Fig. 6 shows typical values

© 2002 IXYS All rights reserved

DSEP 2x61-12A

s

Constants for Z

iR

calculation:

thJC

(K/W) ti (s)

thi

1 0.212 0.0055
2 0.248 0.0092
3 0.063 0.0007
4 0.077 0.0391

2 - 2