IXYS DSEP2X35-06C Datasheet
© 1999 IXYS All rights reserved
1 - 1
HiPerFREDTM Epitaxial Diode
with soft recovery
Features
●
International standard package
miniBLOC
●
Isolation voltage 2500 V~
●
UL registered E 72873
●
2 independent FRED in 1 package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low
EMI/RFI
●
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see CD "Databook 2000"
miniBLOC, SOT-227 B
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
DSEP 2x 35-06C
I
FAV
= 2x 35 A
V
RRM
=600 V
t
rr
= 20 ns
V
RSM
V
RRM
Type
V V
600 600 DSEP 2x 35-06C
Symbol Test Conditions Maximum Ratings
I
FRMS
49 A
I
FAVM
TC = 80°C; rectangular, d = 0.5 35 A
I
FRM
tP < 10 µs; rep. rating, pulse width limited by T
VJM
tbd A
I
FSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine 300 A
E
AS
TVJ = 25°C; non-repetitive 1.2 mJ
IAS = 3 A; L = 180 µH
I
AR
VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+150 °C
P
tot
TC = 25°C 165 W
V
ISOL
50/60 Hz, RMS 2500 V~
I
ISOL
≤ 1 mA
M
d
mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in.
terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.
Weight typical 30 g
Symbol Test Conditions Characteristic Values
typ. max.
I
R
① VR= V
RRM;TVJ
= 25°C 0.25 mA
TVJ = 150°C 1.0 mA
VF② IF = 35 A; TVJ= 150°C 1.83 V
TVJ= 25°C 2.50 V
R
thJC
0.9 K/W
R
thCH
with heatsink compound 0.1 K/W
t
rr
IF = 1 A; -di/dt = 300 A/µs; 20 ns
VR = 30 V; TVJ = 25°C
I
RM
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs4.57.0 A
TVJ = 100°C
940
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