IXYS DSEP2X31-12A Datasheet

© 2000 IXYS All rights reserved

1 - 2

HiPerFREDTM Epitaxial Diode

with soft recovery

Features

●

International standard package
miniBLOC

●

Isolation voltage 2500 V~

●

UL registered E 72873

●

2 independent FRED in 1 package

●

Planar passivated chips

●

Very short recovery time

●

Extremely low switching losses

●

Low IRM-values

●

Soft recovery behaviour

Applications

●

Antiparallel diode for high frequency
switching devices

●

Antisaturation diode

●

Snubber diode

●

Free wheeling diode in converters
and motor control circuits

●

Rectifiers in switch mode power
supplies (SMPS)

●

Inductive heating

●

Uninterruptible power supplies (UPS)

●

Ultrasonic cleaners and welders

Advantages

●

Avalanche voltage rated for reliable
operation

●

Soft reverse recovery for low
EMI/RFI

●

Low IRM reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating
switch

Dimensions see outlines.pdf

miniBLOC, SOT-227 B

Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %

② Pulse Width = 300 ms, Duty Cycle < 2.0 %

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.

DSEP 2x 31-12A

I

FAV

= 2x 30 A

V

RRM

= 1200 V

t

rr

= 40 ns

V

RSM

V

RRM

Type

V V

1200 1200 DSEP 2x 31-12A

Symbol Conditions Maximum Ratings
I

FRMS

70 A

I

FAVM

TC = 70°C; rectangular, d = 0.5 30 A

I

FSM

TVJ = 45°C; tp = 10 ms (50 Hz), sine 200 A

E

AS

TVJ = 25°C; non-repetitive 14 mJ
IAS = 12 A; L = 180 µH

I

AR

VA = 1.25·VR typ.; f = 10 kHz; repetitive 1.2 A

T

VJ

-40...+150 °C

T

VJM

150 °C

T

stg

-40...+150 °C

P

tot

TC = 25°C 110 W

V

ISOL

50/60 Hz, RMS 2500 V~
I

ISOL

£ 1 mA

M

d

mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in.
terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.

Weight typical 30 g

Symbol Conditions Characteristic Values

typ. max.

I

R

① TVJ = 25°C VR= V

RRM

0.25 mA

TVJ = 150°C VR= V

RRM

1mA

VF② IF = 30 A; TVJ= 125°C 1.96 V

TVJ= 25°C 2.72 V

R

thJC

1.15 K/W

R

thCH

0.1 K/W

t

rr

IF = 1 A; -di/dt = 200 A/ms; 40 ns
VR = 30 V; TVJ = 25°C

I

RM

VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms 5.5 A
TVJ = 100°C

008

© 2000 IXYS All rights reserved

2 - 2

NOTE: Fig. 2 to Fig. 6 shows typical values

DSEP 2x 31-12A

200 600 10000 400 800

120

140

160

180

200

220

0.00001 0.0001 0.001 0.01 0.1 1

0.0001

0.001

0.01

0.1

1

10

0 40 80 120 160

0.0

0.5

1.0

1.5

2.0

K

f

T

VJ

°C

-di

F

/dt

t

s

K/W

0 200 400 600 800 1000

0

40

80

120

0.0

0.4

0.8

1.2

V

FR

diF/dt

V

200 600 10000 400 800

0

10

20

30

40

50

60

100 1000

0

1

2

3

4

5

01234

0

10

20

30

40

50

60

70

I

RM

Q

r

I

F

A

V

F

-diF/dt

-di

F

/dt

A/ms

A

V

m

C

A/ms

A/ms

t

rr

ns

t

fr

Z

thJC

A/ms

µs

DSEP 2x31-12A

IF= 60A
IF= 30A
IF= 15A

TVJ= 100°C
VR = 600V

TVJ= 100°C
IF = 30A

Fig. 3 Peak reverse current I

RM

versus -diF/dt

Fig. 2 Reverse recovery charge Q

r

versus -diF/dt

Fig. 1 Forward current I

F

versus V

F

TVJ= 100°C
VR = 600V

TVJ= 100°C
VR = 600V

IF= 60A
IF= 30A
IF= 15A

Q

r

I

RM

Fig. 4 Dynamic parameters Qr, I

RM

versus T

VJ

Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t

fr

versus diF/dt

IF= 60A
IF= 30A
IF= 15A

t

fr

V

FR

Fig. 7 Transient thermal resistance junction to case

008

TVJ=150°C
TVJ=100°C
TVJ= 25°C

Constants for Z

thJC

calculation:

iR

thi

(K/W) ti (s)

1 0.436 0.0056
2 0.482 0.0092
3 0.117 0.0007
4 0.115 0.0418