IXYS DSEP2X31-06B, DSEP2X31-06A Datasheet

© 2000 IXYS All rights reserved
1 - 3
HiPerFREDTM Epitaxial Diode
with soft recovery
Features
International standard package miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Applications
Antiparallel diode for high frequency switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters and motor control circuits
Rectifiers in switch mode power supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see outlines.pdf
miniBLOC, SOT-227 B
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 2x 31-06A DSEP 2x 31-06B
I
FAV
= 2x 30 A
V
RRM
= 600 V
t
rr
= 30/35 ns
V
RSM
V
RRM
Type
V V
600 600 DSEP 2x 31-06A 600 600 DSEP 2x 31-06B
Symbol Conditions Maximum Ratings I
FRMS
70 A
I
FAVM
rect., d = 0.5; TC (Vers. A) = 95°C 30 A
TC (Vers. B) = 85°C
I
FSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine 250 A
E
AS
TVJ = 25°C; non-repetitive 0.2 mJ IAS = 1 A; L = 180 µH
I
AR
VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+150 °C
P
tot
TC = 25°C 100 W
V
ISOL
50/60 Hz, RMS 2500 V~ I
ISOL
£ 1 mA
M
d
mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in. terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.
Weight typical 30 g
Symbol Conditions Characteristic max. Values
Vers. A Vers. B
I
R
TVJ = 25°C VR= V
RRM
0.25 0.25 mA
TVJ = 150°C VR= V
RRM
12mA
VF② IF = 30 A; TVJ= 125°C 1.30 1.73 V
TVJ= 25°C 1.58 2.49 V
R
thJC
1.15 1.15 K/W
R
thCH
typ. 0.1 typ. 0.1 K/W
t
rr
IF = 1 A; -di/dt = 200 A/ms; typ. 35 typ. 30 ns VR = 30 V; TVJ = 25°C
I
RM
VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms typ. 6 typ. 4 A TVJ = 100°C
914
© 2000 IXYS All rights reserved
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DSEP 2x 31-06A
200 600 10000 400 800
70
80
90
100
110
120
130
0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°C
-di
F
/dt
t
s
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
V
FR
diF/dt
V
200 600 10000 400 800
0
10
20
30
40
50
100 1000
0
500
1000
1500
2000
2500
3000
0.0 0.5 1.0 1.5 2.0
0
10
20
30
40
50
60
70
I
RM
Q
r
I
F
A
V
F
-diF/dt
-di
F
/dt
A/ms
A
V
nC
A/ms
A/ms
t
rr
ns
t
fr
Z
thJC
A/ms
µs
DSEP 2x31-06A
IF= 60A IF= 30A IF= 15A
TVJ= 100°C VR = 300V
TVJ= 100°C IF = 30A
Fig. 3 Peak reverse current I
RM
versus -diF/dt
Fig. 2 Reverse recovery charge Q
r
versus -diF/dt
Fig. 1 Forward current IF versus V
F
TVJ= 100°C VR = 300V
TVJ= 100°C VR = 300V
IF= 60A IF= 30A IF= 15A
Q
r
I
RM
Fig. 4 Dynamic parameters Qr, I
RM
versus T
VJ
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
fr
versus diF/dt
IF= 60A IF= 30A IF= 15A
t
fr
V
FR
Fig. 7 Transient thermal resistance junction to case
914
TVJ=25°C
TVJ=100°C
TVJ=150°C
NOTE: Fig. 2 to Fig. 6 shows typical values
Constants for Z
thJC
calculation:
iR
thi
(K/W) ti (s)
1 0.436 0.0055 2 0.482 0.0092 3 0.117 0.0007 4 0.115 0.0418
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