IXYS DSEP29-06B, DSEP29-06A Datasheet

DSEP 29-06A
DSEP 29-06B

HiPerFREDTM Epitaxial Diode

with soft recovery

V

RSM

V V

600 600 DSEP 29-06A
600 600 DSEP 29-06B

Symbol Conditions Maximum Ratings
I

FRMS

I

FAVM

I

FSM

E

AS

I

AR

T

VJ

T

VJM

T

stg

P

tot

M

d

Weight typical 2 g

Symbol Conditions Characteristic max. Values

① TVJ = 25°C VR= V

I

R

V

②I

F

R

thJC

R

thCH

trr typ. IF = 1 A; -di/dt = 200 A/µs; 35 30 ns

IRM typ. VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs 6 4A

Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %

V

RRM

Type

A

35 A

rect., d = 0.5; TC (Version A) = 135°C 30 A

TC (Version B) = 125°C 30 A

TVJ = 45°C; tp = 10 ms (50 Hz), sine; (Version A) 25 0 A

(Version B) 200 A

TVJ = 25°C; non-repetitive 0.2 mJ
IAS = 1.3 A; L = 180 µH

VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A

-55...+175 °C
175 °C

-55...+150 °C

TC = 25°C 165 W
mounting torque 0.4...0.6 Nm

Version A Version B

TVJ = 150°C VR= V

= 30 A; TVJ= 150°C 1.26 1.58 V

F

RRM
RRM

250 250 µA

12mA

TVJ= 25°C 1.61 2.52 V

0.9 0.9 K/W

typ. 0.5 0.5 K/W

VR = 30 V; TVJ = 25°C

T

= 100°C

VJ

② Pulse Width = 300 µs, Duty Cycle < 2.0 %

C

I
V
t

FAV

rr

= 30 A
= 600 V

RRM

= 30/35 ns

TO-220 AC

C

A

A = Anode, C = Cathode, TAB = Cathode

C (TAB)

Features

●

International standard package

●

Planar passivated chips

●

Very short recovery time

●

Extremely low switching losses

●

Low IRM-values

●

Soft recovery behaviour

●

Epoxy meets UL 94V-0

Applications

●

Antiparallel diode for high frequency
switching devices

●

Antisaturation diode

●

Snubber diode

●

Free wheeling diode in converters
and motor control circuits

●

Rectifiers in switch mode power
supplies (SMPS)

●

Inductive heating

●

Uninterruptible power supplies (UPS)

●

Ultrasonic cleaners and welders

Advantages

●

Avalanche voltage rated for reliable
operation

●

Soft reverse recovery for low
EMI/RFI

●

Low IRM reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating
switch

Dimensions see outlines.pdf

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.

© 2000 IXYS All rights reserved

047

1 - 3

DSEP 29-06A

70

A

60

I

50

F

TVJ=150°C

40

TVJ=100°C

30

20

10

TVJ=25°C

0

0.0 0.5 1.0 1.5 2.0
V

F

Fig. 1 Forward current IF versus V

2.0

1.5

K

f

1.0

I

RM

0.5

Q

r

0.0
0 40 80 120 160

°C

T

VJ

Fig. 4 Dynamic parameters Qr, I

versus T

VJ

Q

3000

2500

r

nC

TVJ= 100°C
VR = 300V

I

RM

50

A

40

TVJ= 100°C
VR = 300V

2000

IF= 60A

30

IF= 30A
IF= 15A

20

1500

IF= 60A
IF= 30A
IF= 15A

1000

500

0

V

100 1000

A/µs

-diF/dt

F

Fig. 2 Reverse recovery charge Q

versus -diF/dt

130

ns

TVJ= 100°C
VR = 300V

r

120

t

rr

110

IF= 60A
IF= 30A

10

0

200 600 10000 400 800

-di

Fig. 3 Peak reverse current I

versus -diF/dt

20

V

V

FR

15

t

fr

V

FR

F

/dt

A/µs

RM

1.2

µs

t

fr

0.9

IF= 15A

100

10

0.6

90

80

5

TVJ= 100°C

0.3

IF = 30A

70

200 600 10000 400 800

RM

Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t

-di

A/µs

/dt

F

0

0 200 400 600 800 1000

A/µs

diF/dt

versus diF/dt

0.0

fr

1

K/W

0.1

Z

thJC

0.01

0.001

0.00001 0. 0001 0.001 0.01 0.1 1

s

t

Fig. 7 Transient thermal resistance junction to case

NOTE: Fig. 2 to Fig. 6 shows typical values

© 2000 IXYS All rights reserved

DSEP 29-06A

Constants for Z

iR

calculation:

thJC

(K/W) ti (s)

thi

1 0.502 0.0052
2 0.193 0.0003
3 0.205 0.0162

2 - 3