IXYS DSEP15-12CR Datasheet

DSEP 15-12CR
HiPerDynFREDTM Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
Preliminary Data
V
RSM
V V
1200 1200 DSEP 15-12CR
Symbol Conditions Maximum Ratings I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
F
C
Weight typical 6 g
V
RRM
Type
A
50 A TC = 130°C; rectangular, d = 0.5 15 A tP < 10 µs; rep. rating, pulse width limited by T
VJM
tbd A TVJ = 45°C; tp = 10 ms (50 Hz), sine 110 A TVJ = 25°C; non-repetitive 0.1 mJ
IAS = 1.0 A; L = 180 µH VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.1 A
-55...+175 °C 175 °C
-55...+150 °C
TC = 25°C 150 W 50/60 Hz RMS; I
£ 1 mA 2500 V~
ISOL
mounting force with clip 20...120 N
I
FAV
V t
rr
ISOPLUS 247
C
A = Anode, C = Cathode * Patent pending
= 15 A = 1200 V
RRM
= 20 ns
TM
C
A
Isolated back surface *
Features
Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<25pF)
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Isolated and UL registered E153432
Symbol Conditions Characteristic Values
typ. max.
IR① TVJ = 25°C VR= V
TVJ = 150°C VR= V
RRM RRM
100 µA
0.5 mA
VF② IF = 15 A; TVJ= 150°C 2.67 V
TVJ= 25°C 4.04 V
R
thJC
R
thCH
t
rr
with heatsink compound 0.25 K/W IF = 1 A; -di/dt = 200 A/µs; 20 ns
1 K/W
VR = 30 V; TVJ = 25°C
I
RM
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs 4.0 4.9 A TVJ = 100°C
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Applications
Antiparallel diode for high frequency switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters and motor control circuits
Rectifiers in switch mode power supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see outlines.pdf
018
1 - 1
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