IXYS DSEP15-06B Datasheet
D4
© 2001 IXYS All rights reserved
1 - 1
HiPerFREDTM Epitaxial Diode
with soft recovery
Features
●
International standard package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
●
Epoxy meets UL 94V-0
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low
EMI/RFI
●
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see pages D4 - 85-86
C
A
A = Anode, C = Cathode, TAB = Cathode
C
A
TO-220 AC
C (TAB)
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 15-06B
I
FAV
= 15 A
V
RRM
= 600 V
t
rr
= 25 ns
V
RSM
V
RRM
Type
V V
600 600 DSEP 15-06B
Symbol Conditions Maximum Ratings
I
FRMS
35 A
I
FAVM
TC = 130°C; rectangular, d = 0.5 15 A
I
FSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine 110 A
E
AS
TVJ = 25°C; non-repetitive; IAS = 1 A;
L = 100 µH 0.1 mJ
L = 20 mH 20 mJ
I
AR
VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A
T
VJ
-55...+175 °C
T
VJM
175 °C
T
stg
-55...+150 °C
P
tot
TC = 25°C 95 W
M
d
mounting torque 0.4...0.6 Nm
Weight typical 2 g
Symbol Conditions Characteristic Values
typ. max.
I
R
① TVJ = 25°C VR= V
RRM
100 µA
TVJ = 150°C VR= V
RRM
0.5 mA
VF② IF = 15 A; TVJ= 150°C 1.55 V
TVJ= 25°C 2.52 V
R
thJC
1.6 K/W
R
thCH
0.5 K/W
t
rr
IF = 1 A; -di/dt = 100 A/µs; 25 30 ns
VR = 30 V; TVJ = 25°C
I
RM
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs2.6A
TVJ = 100°C
147
Preliminary data
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