IXYS DSEP15-03A Datasheet
© 2000 IXYS All rights reserved
1 - 2
HiPerFREDTM Epitaxial Diode
with soft recovery
Features
●
International standard package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
●
Epoxy meets UL 94V-0
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low
EMI/RFI
●
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
C
A
A = Anode, C = Cathode, TAB = Cathode
C
A
TO-220 AC
C (TAB)
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 15-03A
I
FAV
= 15 A
V
RRM
= 300 V
t
rr
= 30 ns
V
RSM
V
RRM
Type
V V
300 300 DSEP 15-03A
Symbol Conditions Maximum Ratings
I
FRMS
35 A
I
FAVM
TC = 135°C; rectangular, d = 0.5 15 A
I
FSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine 140 A
E
AS
TVJ = 25°C; non-repetitive 0.8 mJ
IAS = 2.5 A; L = 180 µH
I
AR
VA = 1.5·V
R typ.
; f = 10 kHz; repetitive 0.3 A
T
VJ
-55...+175 °C
T
VJM
175 °C
T
stg
-55...+150 °C
P
tot
TC = 25°C 95 W
M
d
mounting torque 0.4...0.6 Nm
Weight typical 2 g
Symbol Conditions Characteristic Values
typ. max.
I
R
① TVJ = 25°C VR= V
RRM
100 mA
TVJ = 150°C VR= V
RRM
0.5 mA
V
F
② IF = 15 A; TVJ= 150°C 1.21 V
TVJ= 25°C 1.68 V
R
thJC
1.6 K/W
R
thCH
0.5 K/W
t
rr
IF = 1 A; -di/dt = 100 A/ms; 30 ns
VR = 30 V; TVJ = 25°C
I
RM
VR = 100 V; IF = 25 A; -diF/dt = 100 A/ms2.7A
TVJ = 100°C
025
© 2000 IXYS All rights reserved
2 - 2
DSEP 15-03A
NOTE: Fig. 2 to Fig. 6 shows typical values
200 600 10000 400 800
30
40
50
60
70
80
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
04080120160
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
°C
-di
F
/dt
t
s
K/W
0 200 400 600 800 1000
4
6
8
10
12
14
0.60
0.65
0.70
0.75
0.80
0.85
V
FR
diF/dt
V
200 600 10000 400 800
0
5
10
15
20
100 1000
0
100
200
300
400
500
012
0
10
20
30
40
I
RM
Q
r
I
F
A
V
F
-diF/dt
-di
F
/dt
A/ms
A
V
nC
A/ms
A/ms
t
rr
ns
t
fr
A/ms
µs
DSEP 15-03A
Z
thJC
T
VJ
= 150°C
T
VJ
= 100°C
T
VJ
= 25°C
IF = 30A
I
F = 15A
I
F = 7.5A
T
VJ
= 100°C
V
R
= 150V
T
VJ
= 100°C
V
R
= 150V
T
VJ
= 100°C
V
R
= 150V
T
VJ
= 100°C
I
F
= 15A
V
FR
t
fr
I
RM
Q
r
I
F
= 30A
I
F = 15A
I
F = 7.5A
I
F
= 30A
I
F = 15A
I
F = 7.5A
Fig. 3 Peak reverse current I
RM
versus -diF/dt
Fig. 2 Reverse recovery charge Q
r
versus -diF/dt
Fig. 1 Forward current IF versus V
F
Fig. 4 Dynamic parameters Qr, I
RM
versus T
VJ
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
fr
versus diF/dt
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
iR
thi
(K/W) ti (s)
1 0.908 0.005
2 0.35 0.0003
3 0.342 0.017
025
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