IXYS DSEP12-12A Datasheet
DSEP 12-12A
HiPerFREDTM Epitaxial Diode
with soft recovery
V
RSM
V V
1200 1200 DSEP 12-12A
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight typical 2 g
Symbol Conditions Characteristic Values
① TVJ = 25°C VR= V
I
R
V
② IF = 15 A; TVJ= 150°C 1.79 V
F
R
thJC
R
thCH
t
rr
I
RM
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
V
RRM
Type
A
35 A
TC = 125°C; rectangular, d = 0.5 15 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 90 A
TVJ = 25°C; non-repetitive 8.7 mJ
IAS = 9 A; L = 180 µH
VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.9 A
-55...+175 °C
175 °C
-55...+150 °C
TC = 25°C 95 W
mounting torque 0.4...0.6 Nm
typ. max.
100 mA
0.5 mA
TVJ = 150°C VR= V
RRM
RRM
TVJ= 25°C 2.75 V
1.6 K/W
0.5 K/W
IF = 1 A; -di/dt = 100 A/ms; 40 ns
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 25 A; -diF/dt = 100 A/ms4.5 A
TVJ = 100°C
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
I
FAV
V
t
rr
TO-220 AC
C
A = Anode, C = Cathode, TAB = Cathode
= 15 A
= 1200 V
RRM
= 40 ns
C
A
Features
●
International standard package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
●
Epoxy meets UL 94V-0
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low
EMI/RFI
●
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
C (TAB)
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
008
1 - 2
DSEP 12-12A
40
A
35
30
I
F
25
20
TVJ=150°C
TVJ=100°C
TVJ= 25°C
15
10
5
0
01234
V
F
Fig. 1 Forward current IF versus V
2.0
1.5
K
f
1.0
0.5
I
RM
Q
r
Q
3.0
m
C
2.5
r
2.0
1.5
TVJ= 100°C
VR = 600V
IF= 30A
IF= 15A
IF= 7.5A
I
RM
50
A
40
30
20
TVJ= 100°C
VR = 600V
IF= 30A
IF= 15A
IF= 7.5A
1.0
0.5
0.0
V
100 1000
A/ms
-diF/dt
F
Fig. 2 Reverse recovery charge Q
versus -diF/dt
180
ns
160
t
rr
TVJ= 100°C
VR = 600V
r
IF= 30A
140
IF= 15A
IF= 7.5A
10
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF/dt
120
V
V
FR
80
t
fr
40
TVJ= 100°C
IF = 15A
V
F
/dt
FR
A/ms
RM
1.2
µs
t
fr
0.8
0.4
120
0.0
0 40 80 120 160
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus T
VJ
°C
RM
100
200 600 10000 400 800
-di
A/ms
/dt
F
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
10
K/W
1
Z
thJC
0.1
0.01
0.001
0.00001 0.0001 0.001 0.01 0.1 1
s
t
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
DSEP 12-12A
0
0 200 400 600 800 1000
A/ms
diF/dt
versus diF/dt
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.9084 0.0052
2 0.3497 0.0003
3 0.3419 0.0165
0.0
fr
008
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