IXYS DSEI60-12A Datasheet
Fast Recovery
Epitaxial Diode (FRED)
V
RSM
V V
1200 1200 DSEI 60-12A
V
RRM
Type
DSEI 60 I
A
C
FAVM
V
t
rr
= 52 A
= 1200 V
RRM
= 40 ns
TO-247 AD
C
A
A = Anode, C = Cathode
C
Symbol Test Conditions Maximum Ratings
I
FRMS
I
ÿÿ
① TC = 60°C; rectangular, d = 0.5 52 A
FAVM
I
FRM
I
FSM
TVJ = T
VJM
tP < 10 ms; rep. rating, pulse width limited by T
VJM
100 A
800 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 500 A
t = 8.3 ms(60 Hz), sine 540 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 450 A
t = 8.3 ms(60 Hz), sine 480 A
Features
●
●
●
●
●
●
●
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 1250 A2s
t = 8.3 ms(60 Hz), sine 1200 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 1000 A2s
t = 8.3 ms(60 Hz), sine 950 A2s
T
VJ
T
VJM
T
stg
P
tot
M
d
TC = 25°C 189 W
Mounting torque 0.8...1.2 Nm
-40...+150 °C
150 °C
-40...+150 °C
Weight 6g
Symbol Test Conditions Characteristic Values
Applications
●
●
●
●
●
●
●
●
typ. max.
I
R
V
F
V
T0
r
T
R
thJC
R
thCK
R
thJA
t
rr
I
RM
TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V
RRM
TVJ = 125°CVR= 0.8 • V
RRM
RRM
2.2 mA
0.5 mA
14 mA
IF = 60 A; TVJ=150°C 2.0 V
TVJ=25°C 2.55 V
For power-loss calculations only 1.65 V
TVJ = T
VJM
8.3 mW
0.66 K/W
0.25 K/W
35 K/W
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C40 60 ns
VR = 540 V; IF = 60 A; -diF/dt = 480 A/ms3236A
L £ 0.05 mH; TVJ = 100°C
Advantages
●
●
●
●
●
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
① I
rating includes reverse blocking losses at T
FAVM
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
, VR = 0.8 V
VJM
, duty cycle d = 0.5
RRM
© 2000 IXYS All rights reserved
036
1 - 2
DSEI 60, 1200 V
90
A
80
T
= 25°C
VJ
T
70
60
I
F
=100°C
VJ
TVJ=150°C
50
12
TVJ=100°C
µC
V
= 540V
R
10
I
=60A
F
8
=120A
I
Q
r
F
I
=60A
F
IF=30A
6
80
A
60
I
RM
40
40
30
20
10
0
01234
V
F
V
Fig. 1 Forward current Fig. 2 Recovery charge versus -di
versus voltage drop. -diF/dt.
1.4
1.2
1.0
I
K
f
0.8
RM
0.6
Q
0.4
R
0.2
0.0
0 40 80 120 160
T
J
°C
Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -di
junction temperature. versus diF/dt.
4
max.
2
0
10 100 1000
-diF/dt
1.0
µs
T
VJ
VR=540V
0.8
max.
t
rr
0.6
IF=60A
=120A
I
F
=60A
I
F
I
=30A
F
0.4
0.2
typ.
0.0
0 200 400 600 800 1000
-di
/dt
F
20
typ.
A/µs
=100°C
/dt. Fig. 3 Peak reverse current versus
F
0
0 200 400 600 800 1000
60
V
50
40
V
FR
30
20
10
0
A/µs
/dt. Fig. 6 Peak forward voltage
F
0 200 400 600 800 1000
TVJ=100°C
=540V
V
R
I
=60A
F
=120A
I
F
I
=60A
F
IF=30A
-diF/dt
V
FR
t
fr
di
F
/dt
max.
typ.
A/µs
TVJ=125°C
I
=60A
F
A/µs
1200
ns
1000
800
tfr
600
400
200
0
Fig. 7 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
Dimensions
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 2.2 2.54 0.087 0.102
2 - 2
Loading...