IXYS DSEI60-10A Datasheet

Fast Recovery
Epitaxial Diode (FRED)

V

RSM

V V
1000 1000 DSEI 60-10A

V

RRM

Type

DSEI 60 I

A

C

FAVM

V
t

rr

= 60 A
= 1000 V

RRM

= 35 ns

TO-247 AD

C

A

A = Anode, C = Cathode

C

Symbol Test Conditions Maximum Ratings

I

FRMS

I

ÿÿ

① TC = 60°C; rectangular, d = 0.5 60 A

FAVM

I

FRM

I

FSM

TVJ = T

VJM

tP < 10 ms; rep. rating, pulse width limited by T

VJM

100 A
800 A

TVJ = 45°C; t = 10 ms (50 Hz), sine 500 A

t = 8.3 ms(60 Hz), sine 540 A

TVJ = 150°C; t = 10 ms (50 Hz), sine 450 A

t = 8.3 ms(60 Hz), sine 480 A

Features

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I2t TVJ = 45°C t = 10 ms (50 Hz), sine 1250 A2s

t = 8.3 ms(60 Hz), sine 1200 A2s

TVJ = 150°C; t = 10 ms (50 Hz), sine 1000 A2s

t = 8.3 ms(60 Hz), sine 950 A2s

T

VJ

T

VJM

T

stg

P

tot

M

d

TC = 25°C 189 W
Mounting torque 0.8...1.2 Nm

-40...+150 °C
150 °C

-40...+150 °C

Weight 6g

Symbol Test Conditions Characteristic Values

Applications

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typ. max.

I

R

V

F

V

T0

r

T

R

thJC

R

thCK

R

thJA

t

rr

I

RM

TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V

RRM

TVJ = 125°CVR= 0.8 • V

RRM
RRM

3mA

0.5 mA
14 mA

IF = 60 A; TVJ=150°C 1.8 V

TVJ=25°C 2.3 V

For power-loss calculations only 1.43 V
TVJ = T

VJM

6.1 mW

0.66 K/W

0.25 K/W
35 K/W

IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C35 50 ns
VR = 540 V; IF = 60 A; -diF/dt = 480 A/ms3236A

L £ 0.05 mH; TVJ = 100°C

Advantages

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International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour

Epoxy meets UL 94V-0

Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders

High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling

① I

rating includes reverse blocking losses at T

FAVM

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions

, VR = 0.8 V

VJM

, duty cycle d = 0.5

RRM

© 2000 IXYS All rights reserved

036

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DSEI 60, 1000 V

Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus

versus voltage drop. -diF/dt.

Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage

junction temperature. versus diF/dt.

Dimensions

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 2.2 2.54 0.087 0.102

Fig. 7 Transient thermal impedance junction to case.

© 2000 IXYS All rights reserved

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