IXYS DSEI30-10AR, DSEI30-10A Datasheet
© 2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
Type
V V
1000 1000 DSEI 30-10A
1000 1000 DSEI 30-10AR
Symbol Test Conditions Maximum Ratings
I
FRMS
TVJ = T
VJM
70 A
I
FAVM
ÿÿ
① TC = 85°C; rectangular, d = 0.5 30 A
I
FRM
tP < 10 ms; rep. rating, pulse width limited by T
VJM
375 A
I
FSM
TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A
t = 8.3 ms(60 Hz), sine 210 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 185 A
t = 8.3 ms(60 Hz), sine 195 A
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 200 A2s
t = 8.3 ms(60 Hz), sine 180 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 170 A2s
t = 8.3 ms(60 Hz), sine 160 A2s
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+150 °C
P
tot
TC = 25°C 138 W
Md * Mounting torque 0.8...1.2 Nm
F
C
mounting force with clip 20...120 N
V
ISOL
** 50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500 V~
Weight 6g
* Verson A only; ** Version AR only
Symbol Test Conditions Characteristic Values
typ. max.
I
R
TVJ = 25°CVR= V
RRM
750 mA
TVJ = 25°CVR= 0.8 • V
RRM
250 mA
TVJ = 125°CVR= 0.8 • V
RRM
7mA
V
F
IF = 36 A; TVJ=150°C2V
TVJ=25°C 2.4 V
V
T0
For power-loss calculations only 1.5 V
r
T
TVJ = T
VJM
12.5 mW
R
thJC
0.9 K/W
R
thCK
0.25 K/W
R
thJA
35 K/W
t
rr
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C35 50 ns
I
RM
VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms1618A
L £ 0.05 mH; TVJ = 100°C
DSEI 30 I
FAVM
= 30 A
V
RRM
= 1000 V
t
rr
= 35 ns
① I
FAVM
rating includes reverse blocking losses at T
VJM
, VR = 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Features
●
International standard package
JEDEC TO-247 AD
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behavior
●
Epoxy meets UL 94V-0
●
Version AR isolated and
UL registered E153432
Applications
●
Antiparallel diode for high frequency
switching devices
●
Anti saturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
●
Low losses
●
Operating at lower temperature or
space saving by reduced cooling
Fast Recovery
Epitaxial Diode (FRED)
A
C
026
A = Anode, C = Cathode
TO-247 AD ISOPLUS 247
TM
Version A Version AR
A
C (TAB)
C
A
C
Isolated
back surface
*
* Patent pending
© 2000 IXYS All rights reserved
2 - 2
DSEI 30, 1000 V
Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.
Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
Dimensions
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 2.2 2.54 0.087 0.102
Loading...