IXYS DSEI30 Datasheet

Fast Recovery
Epitaxial Diode (FRED)

V

RSM

V V
1200 1200 DSEI 30-12A

V

RRM

Type

DSEI 30 I

A

C

FAVM

V
t

rr

= 26 A
= 1200 V

RRM

= 40 ns

TO-247 AD

C

A

A = Anode, C = Cathode

C

Symbol Test Conditions Maximum Ratings

I

FRMS

I

ÿÿ

① TC = 85°C; rectangular, d = 0.5 26 A

FAVM

I

FRM

I

FSM

TVJ = T

VJM

tP < 10 ms; rep. rating, pulse width limited by T

VJM

70 A

375 A

TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A

t = 8.3 ms(60 Hz), sine 210 A

TVJ = 150°C; t = 10 ms (50 Hz), sine 185 A

t = 8.3 ms(60 Hz), sine 195 A

Features

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I2t TVJ = 45°C t = 10 ms (50 Hz), sine 200 A2s

t = 8.3 ms(60 Hz), sine 180 A2s

TVJ = 150°C; t = 10 ms (50 Hz), sine 170 A2s

t = 8.3 ms(60 Hz), sine 160 A2s

T

VJ

T

VJM

T

stg

P

tot

M

d

TC = 25°C 138 W
Mounting torque 0.8...1.2 Nm

-40...+150 °C
150 °C

-40...+150 °C

Weight 6g

Symbol Test Conditions Characteristic Values

Applications

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typ. max.

I

R

V

F

V

T0

r

T

R

thJC

R

thCK

R

thJA

t

rr

I

RM

TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V

RRM

TVJ = 125°CVR= 0.8 • V

RRM
RRM

750 mA
250 mA

7mA

IF = 30 A; TVJ=150°C 2.2 V

TVJ=25°C 2.55 V

For power-loss calculations only 1.65 V
TVJ = T

VJM

18.2 mW

0.9 K/W

0.25 K/W
35 K/W

IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C40 60 ns
VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms1618A

L £ 0.05 mH; TVJ = 100°C

Advantages

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International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour

Epoxy meets UL 94V-0

Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders

High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling

① I

rating includes reverse blocking losses at T

FAVM

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions

, VR = 0.8 V

VJM

, duty cycle d = 0.5

RRM

© 2000 IXYS All rights reserved

036

1 - 2

DSEI 30, 1200 V

70

A

60

50

I

F

40

=25°C

T

VJ

=100°C

T

VJ

TVJ=150°C

30

20

10

0

01234

V

F

V

6

=100°C

T

VJ

µC

VR= 540V

5

=30A

I

F

4

=60A

I

Q

r

F

=30A

I

F

IF=15A

3

2

max.

1

0

1 10 100 1000

-diF/dt

typ.

A/µs

50

TVJ=100°C

A

V

= 540V

R

40

I

I

RM

30

=30A

F

=60A

I

F

I

=30A

F

IF=15A

max.

20

typ.

10

0

0 200 400 600

/dt

-di

F

A/µs

Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus

versus voltage drop. -diF/dt.

1.4

1.2

1.0

K

f

0.8

0.6

I

RM

Q

R

0.4

0.2

0.0
0 40 80 120 160

T

J

°C

1.0
µs

0.8

t

rr

0.6

max.

I
I
I
I

0.4

0.2

0.0

typ.

0 200 400 600

-diF/dt

T

VJ

VR=540V

=30A

F

=60A

F

=30A

F

=15A

F

=100°C

A/µs

60

V

50

V

FR

40

V

FR

30

20

t

fr

10

0

0 200 400 600

di

/dt

F

TVJ=125°C

I

=30A

F

A/µs

Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage

junction temperature. versus diF/dt.

1200

ns

1000

800

tfr

600

400

200

0

1.0

K/W

0.8

Z

thJC

0.6

0.4

0.2

0.0

0.001 0.01 0.1 1 10

s

t

Fig. 7 Transient thermal impedance junction to case.

© 2000 IXYS All rights reserved

Dimensions

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 2.2 2.54 0.087 0.102

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