IXYS DSEI2X61-12P Datasheet

© 2001 IXYS All rights reserved

1 - 2

D5

Symbol Conditions Maximum Ratings (per diode)

I

FRMS

TVJ = T

VJM

100 A

I

FAVM

① TC = 50°C; rectangular; d = 0.5 52 A

I

FRM

tP < 10 µs; rep. rating; pulse width limited by T

VJM

700 A

I

FSM

TVJ = 45°C; t = 10 ms (50 Hz), sine 450 A

T

VJ

-40...+150 °C

T

VJM

150 °C

T

stg

-40...+150 °C

P

tot

TC = 25°C 180 W

V

ISOL

50/60 Hz, RMS t = 1 min 2500 V~
I

ISOL

≤ 1 mA t = 1 s 3000 V~

M

d

Mounting torque (M4) 1.5 - 2.0 Nm

14 - 18 lb.in.

Weight 18 g

Symbol Conditions Characteristic Values (per diode)

typ. max.

I

R

TVJ = 25°CVR= V

RRM

2.2 mA

TVJ = 25°CVR= 0.8 • V

RRM

0.5 mA

TVJ = 125°CVR= 0.8 • V

RRM

14 mA

V

F

IF = 60 A; TVJ= 150°C 2.15 V

TVJ= 25°C 2.50 V

V

T0

For power-loss calculations only 1.65 V

r

T

TVJ = T

VJM

8.3 mΩ

R

thJC

0.7 K/W

R

thCK

0.05 K/W

t

rr

IF = 1 A; -di/dt = 200 A/µs 40 60 ns
VR = 30 V; TVJ = 25°C

I

RM

VR = 540 V; IF = 60 A; -diF/dt = 480 A/µs 32 36 A
L ≤ 0.05 µH; TVJ = 100°C

d

S

Creeping distance on surface min. 11.2 mm

d

A

Creeping distance in air min. 11.2 mm

a Allowable acceleration max. 50 m/s²

DSEI 2x61 I

FAVM

= 2x52 A

V

RRM

= 1200 V

t

rr

= 40 ns

① I

FAVM

rating includes reverse blocking losses at T

VJM

, VR = 0.8 V

RRM

, duty cycle d = 0.5

Data according to IEC 60747

Features

• 2 independent FRED in 1 package

• Isolation voltage 3000 V~

• Planar passivated chips

• Leads suitable for PC board soldering

• Very short recovery time

• Soft recovery behaviour

Applications

• Antiparallel diode for high frequency
switching devices

• Anti saturation diode

• Snubber diode

• Free wheeling diode in converters
and motor control circuits

• Rectifiers in switch mode power
supplies (SMPS)

• Inductive heating and melting

• Uninterruptible power supplies (UPS)

• Ultrasonic cleaners and welders

Advantages

• Easy to mount with two screws

• Space and weight savings

• Improved temperature and power
cycling capability

• Low noise switching

• Small and light weight

Fast Recovery
Epitaxial Diode (FRED)

139

V

RSM

V

RRM

Type

V V

1200 1200 DSEI 2x 61-12P

IXYS reserves the right to change limits, test conditions and dimensions

© 2001 IXYS All rights reserved

2 - 2

D5

0 200 400 600 800 1000

0.0

0.2

0.4

0.6

0.8

1.0

10 100 1000

0

2

4

6

8

10

12

0 200 400 600 800 1000

0

20

40

60

80

0 200 400 600 800 1000

0

10

20

30

40

50

60

TVJ=125°C

di

F

/dt

t

fr

V

FR

tfr

ns

0

200

400

600

800

1000

1200

A/µs

V

V

FR

VR=540V

T

VJ

=100°C

-di

F

/dt

µs

t

rr

typ.

04080120160

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

K

f

Q

R

I

RM

°C

T

J

TVJ=100°C

A

max.

typ.

V

R

=540V

I

RM

-diF/dt

µC

Q

r

typ.

max.

V

R

= 540V

01234

0

10

20

30

40

50

60

70

80

90

TVJ=100°C

V

V

F

I

F

TVJ=150°C

T

VJ

=100°C

T

VJ

= 25°C

A

IF=60A
I

F

=120A

I

F

=60A

I

F

=30A

I

F

=60A

A/µs

IF=30A

I

F

=60A

I

F

=120A

I

F

=60A

IF=30A

I

F

=60A

I

F

=60A

I

F

=120A

A/µs

A/µs

-diF/dt

max.

DSEI 2x 61-12P

Fig. 7 Transient thermal impedance junction to case.

Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus

versus voltage drop. -diF/dt.

Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage

junction temperature. versus diF/dt.

Dimensions