IXYS DSEI2X31-12P, DSEI2X30-12P Datasheet
© 2001 IXYS All rights reserved
1 - 2
D5
Symbol Conditions Maximum Ratings (per diode)
I
FRMS
TVJ = T
VJM
70 A
I
FAVM
① TC = 50°C; rectangular; d = 0.5 28 A
I
FRM
tP < 10 µs; rep. rating; pulse width limited by T
VJM
375 A
I
FSM
TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+150 °C
P
tot
TC = 25°C 100 W
V
ISOL
50/60 Hz, RMS t = 1 min 2500 V~
I
ISOL
≤ 1 mA t = 1 s 3000 V~
M
d
Mounting torque (M4) 1.5 - 2.0 Nm
14 - 18 lb.in.
Weight 18 g
Symbol Conditions Characteristic Values (per diode)
typ. max.
I
R
TVJ = 25°CVR= V
RRM
750 µA
TVJ = 25°CVR= 0.8 • V
RRM
250 µA
TVJ = 125°CVR= 0.8 • V
RRM
7mA
V
F
IF = 30 A; TVJ= 150°C 2.20 V
TVJ= 25°C 2.55 V
V
T0
For power-loss calculations only 1.65 V
r
T
TVJ = T
VJM
18.2 mΩ
R
thJC
1.25 K/W
R
thCK
0.05 K/W
t
rr
IF = 1 A; -di/dt = 100 A/µs 40 50 ns
VR = 30 V; TVJ = 25°C
I
RM
VR = 540 V; IF = 30 A; -diF/dt = 240 A/µs 16 18 A
L ≤ 0.05 µH; TVJ = 100°C
d
S
Creeping distance on surface min. 11.2 mm
d
A
Creeping distance in air min. 11.2 mm
a Allowable acceleration max. 50 m/s²
I
FAVM
= 2x28 A
V
RRM
= 1200 V
t
rr
= 40 ns
① I
FAVM
rating includes reverse blocking losses at T
VJM
, VR = 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
Features
• 2 independent FRED in 1 package
• Isolation voltage 3000 V~
• Planar passivated chips
• Leads suitable for PC board soldering
• Very short recovery time
• Soft recovery behaviour
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Low noise switching
• Small and light weight
139
V
RSM
V
RRM
Type
V V
1200 1200 DSEI 2x 30-12P
1200 1200 DSEI 2x 31-12P
IXYS reserves the right to change limits, test conditions and dimensions
Fast Recovery
Epitaxial Diode (FRED)
DSEI 2x30
DSEI 2x31
2x30 2x31
© 2001 IXYS All rights reserved
2 - 2
D5
DSEI 2x 30-12P
DSEI 2x 31-12P
Dimensions in mm (1mm = 0.0394“)
0 200 400 600
0
10
20
30
40
50
60
TVJ=125°C
I
F
=30A
di
F
/dt
t
fr
V
FR
tfr
ns
0
200
400
600
800
1000
1200
V
V
FR
0 200 400 600
0.0
0.2
0.4
0.6
0.8
1.0
-diF/dt
t
rr
typ.
max.
04080120160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
Q
R
I
RM
°C
T
J
0 200 400 600
0
10
20
30
40
50
A
max.
typ.
1 10 100 1000
0
1
2
3
4
5
6
µC
I
RM
-diF/dt
Q
r
01234
0
10
20
30
40
50
60
70
V
V
F
I
F
TVJ=150°C
T
VJ
=100°C
T
VJ
=25°C
A
IF=15A
I
F
=30A
I
F
=60A
I
F
=30A
VR= 540V
T
VJ
=100°C
max.
typ.
IF=15A
I
F
=30A
I
F
=60A
I
F
=30A
TVJ=100°C
V
R
= 540V
VR=540V
T
VJ
=100°C
I
F
=15A
I
F
=30A
I
F
=60A
I
F
=30A
µs
A/µs
-di
F
/dt
A/µs
A/µs
A/µs
Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.
Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
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