IXYS DSEI2X121-02A Datasheet

Fast Recovery
Epitaxial Diode (FRED)

DSEI 2x 121 I

FAVM

V

RRM

t

rr

= 2x 123 A
= 200 V
= 35 ns

V

RSM

V

RRM

Type

VV

200 200 DSEI 2x 121-02A

Symbol Test Conditions Maximum Ratings (per diode)

I

FRMS

I

ÿÿ

① TC = 70°C; rectangular, d = 0.5 123 A

FAVM

I

FRM

I

FSM

TVJ = T

VJM

tP < 10 ms; rep. rating, pulse width limited by T

VJM

150 A
600 A

TVJ = 45°C; t = 10 ms (50 Hz), sine 1200 A

t = 8.3 ms(60 Hz), sine 1300 A

TVJ = 150°C; t = 10 ms (50 Hz), sine 1080 A

t = 8.3 ms(60 Hz), sine 1170 A

I2t TVJ = 45°C t = 10 ms (50 Hz), sine 7200 A2s

t = 8.3 ms(60 Hz), sine 7100 A2s

TVJ = 150°C; t = 10 ms (50 Hz), sine 5800 A2s

t = 8.3 ms(60 Hz), sine 5700 A2s

T

VJ

T

VJM

T

stg

P

tot

V

ISOL

M

d

TC = 25°C 250 W
50/60 Hz, RMS 2500 V~

I

£ 1 mA

ISOL

Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.

-40...+150 °C
150 °C

-40...+150 °C

Weight 30 g

Symbol Test Conditions Characteristic Values (per diode)

typ. max.

I

R

V

F

V

T0

r

T

R

thJC

R

thCK

t

rr

I

RM

① I

rating includes reverse blocking losses at T

FAVM

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions

TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V

RRM

TVJ = 125°CVR= 0.8 • V

RRM
RRM

1mA

0.5 mA
20 mA

IF = 120 A; TVJ=150°C 0.89 0.95 V

TVJ=25°C 1.10 V

For power-loss calculations only 0.7 V
TVJ = T

VJM

2.1 mW

0.5 K/W

0.1 K/W
IF = 1 A; -di/dt = 400 A/ms; VR = 30 V; TVJ = 25°C35 50 ns
VR = 100 V; IF = 100 A; -diF/dt = 200 A/ms1215A

L £ 0.05 mH; TVJ = 100°C

, VR = 0.8 V

VJM

, duty cycle d = 0.5

RRM

© 2000 IXYS All rights reserved

miniBLOC, SOT-227 B

E72873

Features

●

International standard package
miniBLOC (ISOTOP compatible)

●

Isolation voltage 2500 V~

●

2 independent FRED in 1 package

●

Planar passivated chips

●

Very short recovery time

●

Extremely low switching losses

●

Low IRM-values

●

Soft recovery behaviour

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505

J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004

V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08

009

1 - 2

DSEI 2x 121, 200V

200

A

175
150

I

F

125
100

TVJ=150°C

75

TVJ=100°C

50

TVJ=25°C

25

0

0.0 0.5 1.0 1.5

V

V

F

Fig. 1 Forward current IF versus V

2.0

1.5

K

f

1.0

Q

r

I

r

2.0

µC

1.5

1.0

TVJ= 100°C
VR = 100V

IF=240A
IF=120A

I

RMQ

60

A

50

40

30

TVJ= 100°C
VR = 100V

IF=240A
IF=120A
IF= 60A

IF= 60A

20

0.5
10

0.0

10 100 1000

A/ms

-diF/dt

F

Fig. 2 Typ. reverse recovery charge Q

versus -diF/dt

150

ns

t

125

rr

TVJ= 100°C
VR = 100V

IF=240A
IF=120A

RM

100

IF= 60A

0

200 600 10000 400 800

Fig. 3 Typ. peak reverse current I

r

12

V

TVJ= 100°C
IF = 120A

versus -diF/dt

10

V

FR

8

t

fr

6

-di

F

/dt

V

A/ms

FR

RM

3.0
µs

2.5

t

fr

2.0

1.5

0.5

0.0
0 50 100 150

T

VJ

Fig. 4 Dynamic parameters Qr, I

versus T

VJ

°C

RM

75

50

200 6000 400 800

/dt

-di

F

Fig. 5 Typ. recovery time t

versus -diF/dt

rr

1

K/W

D=0.5

0.2

0.1

0.1

Z

thJC

0.05

0.02

0.01

0.01

Single Pulse

0.001

0.001 0.01 0.1 1 10

s

t

Fig. 7 Transient thermal impedance junction to case at various duty cycles

A/ms

4

2

0

0 100 200 300 400 500

diF/dt

Fig. 6 Typ. peak forward voltage

VFR and t

Constants for Z

iR

versus diF/dt

fr

calculation:

thJC

(K/W) ti (s)

thi

1 0.0725 0.028
2 0.1423 0.092
3 0.2852 0.35

1.0

0.5

0.0

m

s

A/

© 2000 IXYS All rights reserved

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