IXYS DSEI2X101-12A Datasheet

Fast Recovery
Epitaxial Diode (FRED)

DSEI 2x 101 V

I
t

RRM

FAVM

rr

= 1200 V
= 2x 91 A
= 40 ns

V

RSM

V

RRM

Type

V V

1200 1200 DSEI 2x 101-12A

Symbol Test Conditions Maximum Ratings (per diode)

I

F(RMS)

I

F(AV)M

I

FRM

I

FSM

① T

TVJ = T

VJM

= 50°C; rectangular, d = 0.5 91 A

C

tP < 10 ms; rep. rating, pulse width limited by T

VJM

130 A

TBD A

TVJ = 45°C; t = 10 ms (50 Hz), sine 900 A

t = 8.3 ms(60 Hz), sine 970 A

TVJ = 150°C; t = 10 ms (50 Hz), sine 810 A

t = 8.3 ms(60 Hz), sine 870 A

I2t TVJ = 45°C t = 10 ms (50 Hz), sine 4100 A2s

t = 8.3 ms(60 Hz), sine 4000 A2s

TVJ = 150°C; t = 10 ms (50 Hz), sine 3300 A2s

t = 8.3 ms(60 Hz), sine 3200 A2s

T

VJ

T

VJM

T

stg

P

tot

V

ISOL

M

d

TC = 25°C 250 W
50/60 Hz, RMS 2500 V~

I

£ 1 mA

ISOL

Mounting torque 1.5/13 Nm/lb.in.

-40...+150 °C
150 °C

-40...+150 °C

Terminal connection torque (M4) 1.5/13 Nm/lb.in.

Weight 30 g

Symbol Test Conditions Characteristic Values (per diode)

typ. max.

I

R

V

F

TVJ = 25°C VR= V

RRM

TVJ = 25°C VR= 0.8 • V
TVJ = 125°C VR= 0.8 • V

RRM
RRM

3mA

1.5 mA
15 mA

IF = 100 A; TVJ=150°C 1.61 V

TVJ= 25°C 1.87 V

V

T0

r

T

R

thJC

R

thCH

t

rr

I

RM

For power-loss calculations only 1.01 V

6.1 mW

0.5 K/W

0.05 K/W
IF = 1 A; -di/dt = 400 A/µs; VR = 30 V; TVJ = 25°C 40 60 ns
VR = 100 V; IF = 75 A; -diF/dt = 200 A/µs 24 30 A

L £ 0.05 mH; TVJ = 100°C

① I

rating includes reverse blocking losses at T

FAVM

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions

, VR = 0.8 V

VJM

, duty cycle d = 0.5

RRM

© 2000 IXYS All rights reserved

miniBLOC, SOT-227 B

E72873

Features

●

International standard package

●

miniBLOC (ISOTOP compatible)

●

Isolation voltage 2500 V~

●

matched diodes f. parallel operation

●

Planar passivated chips

●

two independent diodes

●

Very short recovery time

●

Extremely low switching losses

●

Low IRM-values

●

Soft recovery behaviour

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323

C 4 .09 4.29 0.161 0.169
D 4 .09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505

J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059

R 3 .94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004

V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08

008

1 - 2

DSEI 2x 101, 1200V

150

A

125

I

F

100

TVJ=150°C

75

TVJ=100°C

50

TVJ= 25°C

25

0

0.0 0.5 1.0 1.5 2.0

V

V

F

Fig. 1 Forward current IF versus V

1.4

1.2

K

f

1.0

I

0.8

0.6

RM

Q

r

16

TVJ= 100°C

µC

VR = 600V

14

Q

12

r

10

8

IF=200A
IF=100A
IF= 50A

6
4
2
0

100 1000

A/ms

-diF/dt

F

Fig. 2 Reverse recovery charge Q

versus -diF/dt

500

ns

TVJ= 100°C
VR = 600V

r

450

t

rr

400

350

IF=200A

140

TVJ= 100°C

A

VR =600V

120

I

RM

100

80

IF=200A

60

IF=100A
IF= 50A

40

20

0

200 600 10000 400 800

-di

Fig. 3 Peak reverse current I

versus -diF/dt

60

V

50

V

FR

40

t

fr

30

TVJ= 100°C
IF = 100A

A/ms

/dt

F

RM

1.5

µs

t

fr

1.0

V

FR

IF=100A

300

250

IF= 50A

20

10

0.5

0.4
0 40 80 120 160

T

VJ

Fig. 4 Dynamic parameters Qr, I

versus T

VJ

°C

RM

200

200 600 10000 400 800

-di

A/ms

/dt

F

Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t

1

K/W

D=0.7

0.5

Z

thJC

0.3

0.2

0.1

0.1

0.05

Single Pulse

0.05

0.001 0.01 0.1 1 10

s

DSEI 2x101-12

t

Fig. 7 Transient thermal impedance junction to case at various duty cycles

0

0 200 400 600 800 1000

diF/dt

versus diF/dt

Constants for Z

iR

calculation:

thJC

(K/W) ti (s)

thi

1 0.02 0.00002
2 0.05 0.00081
3 0.076 0.01
4 0.24 0.94
5 0.114 0.45

0.0

A/ms

fr

© 2000 IXYS All rights reserved

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