IXYS DSEI2X101-06P Datasheet

© 2001 IXYS All rights reserved

1 - 2

D5

Symbol Conditions Maximum Ratings (per diode)

I

FRMS

TVJ = T

VJM

150 A

I

FAVM

① TC = 70°C; rectangular; d = 0.5 96 A

I

FRM

tP < 10 µs; rep. rating; pulse width limited by T

VJM

tbd A

I

FSM

TVJ = 45°C; t = 10 ms (50 Hz), sine 1200 A

T

VJ

-40...+150 °C

T

VJM

150 °C

T

stg

-40...+150 °C

P

tot

TC = 25°C 250 W

V

ISOL

50/60 Hz, RMS t = 1 min 2500 V~
I

ISOL

≤ 1 mA t = 1 s 3000 V~

M

d

Mounting torque (M4) 1.5 - 2.0 Nm

14 - 18 lb.in.

Weight 24 g

Symbol Conditions Characteristic Values (per diode)

typ. max.

I

R

TVJ = 25°CVR= V

RRM

3mA

TVJ = 25°CVR= 0.8 • V

RRM

1mA

TVJ = 125°CVR= 0.8 • V

RRM

20 mA

V

F

IF = 100 A; TVJ= 150°C 1.17 V

TVJ= 25°C 1.25 V

V

T0

For power-loss calculations only 0.7 V

r

T

TVJ = T

VJM

4.7 mΩ

R

thJC

0.5 K/W

R

thCK

0.05 K/W

t

rr

IF = 1 A; -di/dt = 400 A/µs 40 60 ns
VR = 30 V; TVJ = 25°C

I

RM

VR = 100 V; IF = 80 A; -diF/dt = 200 A/µs 19 24 A
L ≤ 0.05 µH; TVJ = 100°C

d

S

Creeping distance on surface min. 11.2 mm

d

A

Creeping distance in air min. 11.2 mm

a Allowable acceleration max. 50 m/s²

DSEI 2x101 I

FAVM

= 2x96 A

V

RRM

= 600 V

t

rr

= 35 ns

① I

FAVM

rating includes reverse blocking losses at T

VJM

, VR = 0.8 V

RRM

, duty cycle d = 0.5

Data according to IEC 60747

Features

• 2 independent FRED in 1 package

• Isolation voltage 3000 V~

• Planar passivated chips

• Leads suitable for PC board soldering

• Very short recovery time

• Soft recovery behaviour

Applications

• Antiparallel diode for high frequency
switching devices

• Anti saturation diode

• Snubber diode

• Free wheeling diode in converters
and motor control circuits

• Rectifiers in switch mode power
supplies (SMPS)

• Inductive heating and melting

• Uninterruptible power supplies (UPS)

• Ultrasonic cleaners and welders

Advantages

• Easy to mount with two screws

• Space and weight savings

• Improved temperature and power
cycling capability

• Low noise switching

• Small and light weight

Fast Recovery
Epitaxial Diode (FRED)

139

V

RSM

V

RRM

Type

V V

600 600 DSEI 2x 101-06P

IXYS reserves the right to change limits, test conditions and dimensions

AC-1 IK-10

LN-9 VX-1 8

© 2001 IXYS All rights reserved

2 - 2

D5

DSEI 2x 101-06P

Dimensions in mm (1mm = 0.0394“)

200 600 10000 400 800

120

140

160

180

200

220

240

260

0.001 0.01 0.1 1 10

0.1

1

0 50 100 150

0.4

0.6

0.8

1.0

1.2

1.4

K

f

T

VJ

°C

-di

F

/dt

t

s

K/W

0 200 400 600 800 1000

10

30

50

0

20

40

60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V

FR

diF/dt

V

200 600 10000 400 800

10

30

50

70

0

20

40

60

80

100 1000

0

1

2

3

4

5

6

7

0.0 0.5 1.0 1.5

0

25

50

75

100

125

150

I

RM

Q

r

I

F

A

V

F

-diF/dt

-di

F

/dt

A/µs

A

V

µC

A/µs

A/µs

t

rr

ns

t

fr

Z

thJC

A/µs

µs

Single Pulse

0.05

0.1

0.2

0.3

0.5

D=0.7

0.05

DSEI 2x101-06

IF=200A
IF=100A
IF= 50A

TVJ= 100°C
VR = 300V

TVJ= 100°C
IF = 100A

Fig. 3 Peak reverse current I

RM

versus -diF/dt

Fig. 2 Reverse recovery charge Q

r

versus -diF/dt

Fig. 1 Forward current IF versus V

F

TVJ=100°C

TVJ=25°C

TVJ=150°C

TVJ= 100°C
VR = 300V

TVJ= 100°C
VR = 300V

IF=200A
IF=100A
IF= 50A

Q

r

I

RM

Fig. 4 Dynamic parameters Qr, I

RM

versus T

VJ

Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t

fr

versus diF/dt

IF=200A
IF=100A
IF= 50A

t

fr V

FR

Fig. 7 Transient thermal impedance junction to case at various duty cycles