IXYS DSEI20-12A Datasheet
Fast Recovery
Epitaxial Diode (FRED)
V
RSM
V V
1200 1200 DSEI 20-12A
V
RRM
Type
DSEI 20 I
A
C
FAVM
V
t
rr
= 17 A
= 1200 V
RRM
= 40 ns
TO-220 AC
C
A
A = Anode, C = Cathode
C
Symbol Test Conditions Maximum Ratings
I
FRMS
I
ÿÿ
① TC = 85°C; rectangular, d = 0.5 17 A
FAVM
I
FRM
I
FSM
TVJ = T
VJM
tP < 10 ms; rep. rating, pulse width limited by T
VJM
70 A
220 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 130 A
t = 8.3 ms(60 Hz), sine 140 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 110 A
t = 8.3 ms(60 Hz), sine 120 A
Features
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I2t TVJ = 45°C t = 10 ms (50 Hz), sine 85 A2s
t = 8.3 ms(60 Hz), sine 80 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 60 A2s
t = 8.3 ms(60 Hz), sine 60 A2s
T
VJ
T
VJM
T
stg
P
tot
M
d
TC = 25°C78W
Mounting torque 0.4...0.6 Nm
-40...+150 °C
150 °C
-40...+150 °C
Weight 2g
Applications
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Symbol Test Conditions Characteristic Values
typ. max.
Advantages
I
R
V
F
V
T0
r
T
R
thJC
R
thJA
t
rr
I
RM
TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V
TVJ = 125°CVR= 0.8 • V
RRM
RRM
RRM
IF = 12 A; TVJ=150°C 1.87 V
TVJ=25°C 2.15 V
For power-loss calculations only 1.65 V
TVJ = T
VJM
750 mA
250 mA
7mA
18.2 mW
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1.6 K/W
60 K/W
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C40 60 ns
VR = 540 V; IF = 20 A; -diF/dt = 100 A/ms7 A
L £ 0.05 mH; TVJ = 100°C
International standard package
Glass passivated chips
Very short recovery time
Extremely low losses at high
switching frequencies
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
① I
rating includes reverse blocking losses at T
FAVM
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
, VR = 0.8 V
VJM
, duty cycle d = 0.5
RRM
© 2000 IXYS All rights reserved
033
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DSEI 20, 1200V
70
A
60
50
40
30
T
VJ
=100°C
T
VJ
TVJ=150°C
I
F
= 25°C
20
10
0
01234
V
F
V
6
=100°C
T
VJ
µC
VR= 540V
5
=30A
I
F
4
=60A
I
Q
r
F
=30A
I
F
IF=15A
3
2
max.
1
0
1 10 100 1000
-diF/dt
50
TVJ=100°C
A
V
= 540V
R
40
=30A
30
I
F
I
=60A
F
=30A
I
F
IF=15A
I
RM
max.
20
typ.
10
typ.
0
m
s
A/
0 200 400 600
A/ms
-diF/dt
Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.
1.4
1.2
1.0
K
f
I
RM
0.8
0.6
Q
0.4
R
0.2
0.0
0 40 80 120 160
T
VJ
°C
1.0
µs
0.9
0.8
0.7
t
rr
max.
0.6
I
I
I
I
0.5
0.4
0.3
typ.
0.2
0.1
0 200 400 600
-diF/dt
T
=100°C
VJ
VR=540V
=30A
F
=60A
F
=30A
F
=15A
F
A/
m
s
60
V
50
40
V
FR
V
FR
30
20
t
fr
10
0
0 200 400 600
/dt
-di
F
TVJ=125°C
I
=30A
F
A/
m
s
Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.
1200
ns
1000
800
600
400
200
tfr
0
Fig. 7 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
Dimensions
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 14.73 0.500 0.580
B 14.23 16.51 0.560 0.650
C 9.66 10.66 0.380 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.420
F 2.54 3.42 0.100 0.135
G 1.15 1.77 0.045 0.070
H - 6.35 - 0.250
J 0.64 0.89 0.025 0.035
K 4.83 5.33 0.190 0.210
L 3.56 4.82 0.140 0.190
M 0.38 0.56 0.015 0.022
N 2.04 2.49 0.080 0.115
Q 0.64 1.39 0.025 0.055
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