IXYS DSEI 12-12A Datasheet

Fast Recovery
Epitaxial Diode (FRED)

DSEI 12-12A

I

= 11 A

FAV

V

= 1200 V

RRM

trr = 50 ns

V

RSM

V

V

Type

RRM

A C

V

1200 1200 DSEI 12-12A

Symbol Conditions Maximum Ratings

I

FRMS

I

FAVM

I

FRM

I

FSM

2

t

I

TVJ = T



VJM

TC = 100°C; rectangular, d = 0.5
tp < 10 µs; rep. rating, pulse width limited by T

TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine

= 150°C; t = 10 ms (50 Hz), sine

T

VJ

t = 8.3 ms (60 Hz), sine

TVJ = 45°C; t = 10 ms (50 Hz), sine

VJM

25
11

150

75
80

65
70

2827A2s

t = 8.3 ms (60 Hz), sine

= 150°C; t = 10 ms (50 Hz), sine

T

VJ

2120A2s

t = 8.3 ms (60 Hz), sine

T

VJ

T

VJM

T

stg

P

tot

M

d

Weight

TC = 25°C 78 W

mounting torque 0.4...0.6 Nm

typical 2 g

-40...+150
150

-40...+150

Symbol Conditions Characteristic Values

typ. max.

I

R

V

F

V

T0

r

T

R

thJC

R

thCH

R

thJA

t

rr

I

RM

VR = V
VR = 0.8·V
VR = 0.8·V

IF = 12 A TVJ = 150°C
TVJ = 25°C

For power-loss calculations only
TVJ = T

TVJ = 25°C

RRM

RRM TVJ

RRM TVJ

VJM

= 25°C
= 125°C

250
150

4

2.2

2.6

1.65

46.2VmW

1.660K/W

0.5

IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C 50 70 ns

VR = 540 V; IF = 12 A; -diF/dt = 100 A/µs

6.5 7.2 A

L < 0.05 µH; TVJ = 100°C

 I

rating includes reverse blocking losses at T

FAVM

Data according to IEC 60747

. VR = 0.8·V

VJM

, duty cycle d = 0.5

RRM

°C
°C
°C

µA
µA

mA

K/W
K/W

TO-220 AC

C

A

A = Anode, C = Cathode

Features

• International standard package

A

JEDEC TO-220 AC

A

• Planar passivated chips

A

• Very short recovery time

A

• Extremely low switching losses

• Low I

• Soft recovery behaviour

A

-values

RM

• Epoxy meets UL 94V-0

Applications

• Antiparallel diode for high frequency
switching devices

• Anti saturation diode

• Snubber diode

• Free wheeling diode in converters
and motor control circuits

• Rectifiers in switch mode power
supplies (SMPS)

• Inductive heating and melting

• Uninterruptible power supplies (UPS)

• Ultrasonic cleaners and welders

Advantages

•

High reliability circuit operation

• Low voltage peaks for reduced
protection circuits

• Low noise switching

V

• Low losses

V

• Operating at lower temperature or
space saving by reduced cooling



C

IXYS reserves the right to change limits, test conditions and dimensions.

© 2004 IXYS All rights reserved

20071004

1 - 3

DSEI 12-12A

100 3000 200 400

0.0

0.2

0.4

0.6

0.8

1.0

0.001 0.01 0.1 1 10

0.0

0.4

0.8

1.2

1.6

2.0

0 40 80 120 160

0.2

0.4

0.6

0.8

1.0

1.2

1.4

K

f

TVJ [°C]

-di

F

/dt [A/µs]

t [s]

0 100 200 300 400

0

10

20

30

40

50

60

0

200

400

600

800

1000

1200

V

FR

[V]

diF/dt [A/µs]

100 3000 200 400

5

15

25

0

10

20

30

1 10 100 1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0 1 2 3

0

10

20

30

I

RM

[A]

Q

r

[µC]

I

F

[A]

VF [V]

-diF/dt [A/µs]

t

rr

[ns]

t

fr

[µs]

Z

thJC

[k/W]

DSEI 12-10A

-diF/dt [A/µs]

TVJ = 150°C

100°C

25°C

typ.

max

typ.

max

Q

r

I

RM

typ.

max

t

fr

V

FR

TVJ = 100°C
V

R

= 540 V

TVJ = 100°C
V

R

= 540 V

IF = 11 A

22 A
11 A

5.5 A

TVJ = 100°C
V

R

= 540 V

IF = 11 A

22 A
11 A

5.5 A

IF = 11 A

22 A
11 A

5.5 A

TVJ = 125°C
I

F

= 11 A

Fig. 1 Forward current
versus voltage drop

Fig. 4 Dynamic parameters versus
junction temperature

Fig. 2 Recovery charge
versus -diF /dt

Fig. 5 Recovery time versus -di

Fig. 3 Peak reverse current
versus -diF /dt

/dt

F

Fig. 6 Peak forward voltage
versus diF /dt

Fig. 7 Transient thermal resistance junction to case

IXYS reserves the right to change limits, test conditions and dimensions.

© 2004 IXYS All rights reserved

20071004

2 - 3

Dimensions TO-220 AC

DSEI 12-12A

IXYS reserves the right to change limits, test conditions and dimensions.

© 2004 IXYS All rights reserved

20071004

3 - 3