IXYS DSEI12-10A Datasheet

Fast Recovery
Epitaxial Diode (FRED)

V

RSM

V V
1000 1000 DSEI 12-10A

V

RRM

Type

DSEI 12 I

A

C

FAVM

V
t

rr

= 12 A
= 1000 V

RRM

= 50 ns

TO-220 AC

C

A

A = Anode, C = Cathode

C

Symbol Test Conditions Maximum Ratings

I

FRMS

I

ÿÿ

① TC = 100°C; rectangular, d = 0.5 12 A

FAVM

I

FRM

I

FSM

TVJ = T

VJM

tP < 10 ms; rep. rating, pulse width limited by T

VJM

25 A

150 A

TVJ = 45°C; t = 10 ms (50 Hz), sine 75 A

t = 8.3 ms(60 Hz), sine 80 A

TVJ = 150°C; t = 10 ms (50 Hz), sine 65 A

t = 8.3 ms(60 Hz), sine 70 A

Features

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I2t TVJ = 45°C t = 10 ms (50 Hz), sine 28 A2s

t = 8.3 ms(60 Hz), sine 27 A2s

TVJ = 150°C; t = 10 ms (50 Hz), sine 21 A2s

t = 8.3 ms(60 Hz), sine 20 A2s

T

VJ

T

VJM

T

stg

P

tot

M

d

TC = 25°C78W
Mounting torque 0.4...0.6 Nm

-40...+150 °C
150 °C

-40...+150 °C

Weight 2g

Symbol Test Conditions Characteristic Values

Applications

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typ. max.

I

R

V

F

V

T0

r

T

R

thJC

R

thCK

R

thJA

t

rr

I

RM

TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V

RRM

TVJ = 125°CVR= 0.8 • V

RRM
RRM

250 mA
150 mA

4mA

IF = 12 A; TVJ=150°C 2.1 V

TVJ=25°C 2.7 V

For power-loss calculations only 1.67 V
TVJ = T

VJM

33.6 mW

1.6 K/W

0.5 K/W
60 K/W

IF = 1 A; -di/dt = 50 A/ms; VR = 30 V; TVJ = 25°C50 60 ns
VR = 540 V; IF = 12 A; -diF/dt = 100 A/ms 6.5 7.2 A

L £ 0.05 mH; TVJ = 100°C

Advantages

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International standard package
JEDEC TO-220 AC
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour

Epoxy meets UL 94V-0

Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders

High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling

① I

rating includes reverse blocking losses at T

FAVM

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions

, VR = 0.8 V

VJM

, duty cycle d = 0.5

RRM

© 2000 IXYS All rights reserved

033

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DSEI 12, 1000 V

Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus

versus voltage drop. -diF/dt.

Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage

junction temperature. versus diF/dt.

Dimensions

Dim. Millimeter Inches

Min. Max. Min. Max.

A 12.70 14.73 0.500 0.580
B 14.23 16.51 0.560 0.650

C 9.66 10.66 0.380 0.420
D 3.54 4.08 0.139 0.161

E 5.85 6.85 0.230 0.420
F 2.54 3.42 0.100 0.135

G 1.15 1.77 0.045 0.070
H - 6.35 - 0.250

J 0.64 0.89 0.025 0.035
K 4.83 5.33 0.190 0.210

L 3.56 4.82 0.140 0.190
M 0.38 0.56 0.015 0.022

N 2.04 2.49 0.080 0.115
Q 0.64 1.39 0.025 0.055

Fig. 7 Transient thermal impedance junction to case.

© 2000 IXYS All rights reserved

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