IXYS DSEI120-12A Datasheet

Fast Recovery
Epitaxial Diode (FRED)

V

RSM

V V
1200 1200 DSEI 120-12A

V

RRM

Type

DSEI 120 I

A

C

FAVM

V
t

rr

= 109 A
= 1200 V

RRM

= 40 ns

TO-247 AD

C

A

A = Anode, C = Cathode

C

Symbol Test Conditions Maximum Ratings

I

FRMS

I

ÿÿ

① TC = 60°C; rectangular, d = 0.5 109 A

FAVM

I

② TC = 95°C; rectangular, d = 0.5 75 A

FAV

I

FRM

I

FSM

TVJ = T

VJM

tP < 10 ms; rep. rating, pulse width limited by T

VJM

100 A

tbd A

TVJ = 45°C; t = 10 ms (50 Hz), sine 600 A

t = 8.3 ms(60 Hz), sine 660 A

TVJ = 150°C; t = 10 ms (50 Hz), sine 540 A

t = 8.3 ms(60 Hz), sine 600 A

Features

●

●

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I2t TVJ = 45°C t = 10 ms (50 Hz), sine 1800 A2s

t = 8.3 ms(60 Hz), sine 1800 A2s

TVJ = 150°C; t = 10 ms (50 Hz), sine 1450 A2s

Applications

●

t = 8.3 ms(60 Hz), sine 1500 A2s

T

VJ

T

VJM

T

stg

P

tot

M

d

TC = 25°C 357 W
Mounting torque 0.8...1.2 Nm

-40...+150 °C
150 °C

-40...+150 °C

Weight 6g

●

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Symbol Test Conditions Characteristic Values

typ. max.

Advantages

I

R

V

F

V

T0

r

T

R

thJC

R

thCK

R

thJA

t

rr

I

RM

TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V
TVJ = 125°CVR= 0.8 • V

RRM

RRM
RRM

IF = 70 A; TVJ=150°C 1.55 V

TVJ=25°C 1.8 V

For power-loss calculations only 1.2 V
TVJ = T

VJM

3mA

1.5 mA
20 mA

4.6 mW

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0.35 K/W

0.25 K/W

Dimensions

35 K/W

IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C40 60 ns

See DSEI 60-12 on page D5 - 27

VR = 350 V; IF = 75 A; -diF/dt = 200 A/ms2530A
L £ 0.05 mH; TVJ = 100°C

International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour

Epoxy meets UL 94V-0

Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders

High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling

① Chip capability, ② limited to 70 A by leads

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions

© 2000 IXYS All rights reserved

009

1 - 2

DSEI 120, 1200 V

150

A

125

I

F

100

TVJ=150°C

75

TVJ=100°C

50

TVJ= 25°C

25

0

0.0 0.5 1.0 1.5 2.0

V

V

F

Fig. 1 Forward current IF versus V

1.4

1.2

K

f

1.0

I

0.8

0.6

RM

Q

r

Q

16
µC

14
12

r

10

8
6

TVJ= 100°C
VR = 600V

IF=140A
IF= 70A
IF= 35A

I

RM

120

A

100

80

60

40

TVJ= 100°C
VR = 600V

IF=140A
IF= 70A
IF= 35A

4
2
0

100 1000

A/ms

-diF/dt

F

Fig. 2 Reverse recovery charge Q

versus -diF/dt

500

ns

TVJ= 100°C
VR = 600V

r

450

t

rr

400

350

IF=140A

20

0

200 600 10000 400 800

-di

Fig. 3 Peak reverse current I

versus -diF/dt

60

V

50

V

FR

40

30

t

fr

TVJ= 100°C
IF = 100A

V

F

/dt

FR

A/ms

RM

1.5

µs

t

fr

1.0

IF= 70A

300

250

IF= 35A

20

10

0.5

0.4
0 40 80 120 160

T

VJ

Fig. 4 Dynamic parameters Qr, I

versus T

VJ

°C

RM

200

200 600 10000 400 800

-di

/dt

F

Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t

1

K/W

D=0.7

0.5

Z

thJC

0.3

0.2

0.1

0.01

0.05

Single Pulse

0.01

0.001 0.01 0.1 1 10

s

t

Fig. 7 Transient thermal resistance junction to case

A/ms

DSEI 120-12

0

0 200 400 600 800 1000

diF/dt

versus diF/dt

Constants for Z

iR

calculation:

thJC

(K/W) ti (s)

thi

1 0.017 0.00038
2 0.0184 0.0026
3 0.1296 0.0387
4 0.185 0.274

0.0

A/ms

fr

© 2000 IXYS All rights reserved

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