IXYS DSEI120-06A Datasheet
Fast Recovery
Epitaxial Diode (FRED)
V
RSM
V V
600 600 DSEI 120-06A
V
RRM
Type
DSEI 120 I
A
C
RRM
= 126 A
= 600 V
= 35 ns
FAVM
V
t
rr
TO-247 AD
C
A
A = Anode, C = Cathode
C
Symbol Test Conditions Maximum Ratings
I
FRMS
I
ÿÿ
① TC = 70°C; rectangular, d = 0.5 126 A
FAVM
I
② TC = 110°C; rectangular, d = 0.5 77 A
FAV
I
FRM
I
FSM
TVJ = T
VJM
tP < 10 ms; rep. rating, pulse width limited by T
VJM
100 A
tbd A
TVJ = 45°C; t = 10 ms (50 Hz), sine 600 A
t = 8.3 ms(60 Hz), sine 660 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 540 A
t = 8.3 ms(60 Hz), sine 600 A
Features
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I2t TVJ = 45°C t = 10 ms (50 Hz), sine 1800 A2s
t = 8.3 ms(60 Hz), sine 1800 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 1450 A2s
t = 8.3 ms(60 Hz), sine 1500 A2s
T
VJ
T
VJM
T
stg
P
tot
M
d
TC = 25°C 357 W
Mounting torque 0.8...1.2 Nm
-40...+150 °C
150 °C
-40...+150 °C
Weight 6g
Applications
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Symbol Test Conditions Characteristic Values
typ. max.
I
R
V
F
V
T0
r
T
R
thJC
R
thCK
R
thJA
t
rr
I
RM
TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V
RRM
TVJ = 125°CVR= 0.8 • V
RRM
RRM
3mA
0.75 mA
20 mA
IF = 70 A; TVJ=150°C 1.12 V
TVJ=25°C 1.3 V
For power-loss calculations only 0.85 V
TVJ = T
VJM
3.5 mW
0.35 K/W
0.25 K/W
35 K/W
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C35 50 ns
VR = 350 V; IF = 80 A; -diF/dt = 200 A/ms1721A
L £ 0.05 mH; TVJ = 100°C
Advantages
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Dimensions
See DSEI 60-12 page D5 - 27
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
① Chip capability, ② limited to 70 A by leads
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
028
1 - 2
DSEI 120, 600V
150
A
125
I
F
100
TVJ=150°C
75
TVJ=100°C
50
25
TVJ=25°C
0
0.0 0.5 1.0 1.5
V
V
F
Fig. 1 Forward current IF versus V
1.4
1.2
K
f
1.0
Q
r
0.8
I
0.6
RM
0.4
0 50 100 150
°C
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus T
VJ
Q
7
µC
6
r
5
4
TVJ= 100°C
VR = 300V
IF=140A
IF= 70A
IF= 35A
I
RM
80
TVJ= 100°C
A
VR = 300V
70
60
50
IF=140A
IF= 70A
IF= 35A
40
3
30
2
1
0
100 1000
A/ms
-diF/dt
F
Fig. 2 Reverse recovery charge Q
versus -diF/dt
240
ns
TVJ= 100°C
VR = 300V
r
220
t
rr
200
180
IF=140A
IF= 70A
IF= 35A
20
10
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF/dt
60
V
50
V
FR
40
t
fr
30
20
TVJ= 100°C
IF = 100A
V
F
FR
A/ms
/dt
RM
3.0
µs
2.5
t
fr
2.0
1.5
1.0
160
10
0.5
140
200 600 10000 400 800
RM
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
-di
A/ms
/dt
F
0 200 400 600 800 1000
diF/dt
versus diF/dt
0
0.0
A/ms
fr
1
K/W
D=0.7
0.5
Z
thJC
0.3
0.2
0.1
0.01
0.05
Single Pulse
0.01
0.001 0.01 0.1 1 10
s
t
Fig. 7 Transient thermal resistance junction to case at various duty cycles
© 2000 IXYS All rights reserved
DSEI 120-06
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.017 0.00038
2 0.0184 0.0026
3 0.1296 0.0387
4 0.185 0.274
2 - 2
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