IXYS DSEE8-06CC Datasheet
HiPerDynFREDTM Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified
Q Diodes connected in series
R Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
S Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low cathode to tab capacitance (<15pF)
l
Planar passivated chips
l
Very short recovery time
l
Extremely low switching losses
l
Low IRM-values
l
Soft recovery behaviour
l
Epoxy meets UL 94V-0
Applications
l
Antiparallel diode for high frequency
switching devices
l
Antisaturation diode
l
Snubber diode
l
Free wheeling diode in converters
and motor control circuits
l
Rectifiers in switch mode power
supplies (SMPS)
l
Inductive heating
l
Uninterruptible power supplies (UPS)
l
Ultrasonic cleaners and welders
Advantages
l
Avalanche voltage rated for reliable
operation
l
Soft reverse recovery for low EMI/RFI
l
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
I
FAV
= 10 A
V
RRM
= 600 V
t
rr
= 30 ns
V
RRM
Q V
RRM
Type
V V
600 300 DSEE8-06CC
Symbol Conditions Maximum Ratings
I
FRMS
20 A
I
FAVM
TC = 110°C; rectangular, d = 0.5 10 A
I
FRM
tP < 10 µs; rep. rating, pulse width limited by T
VJM
10 A
I
FSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine 60 A
E
AS
TVJ = 25°C; non-repetitive 0.5 mJ
IAS = 2 A; L = 180 µH
I
AR
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive 0.2 A
T
VJ
-55...+175 °C
T
VJM
175 °C
T
stg
-55...+150 °C
P
tot
TC = 25°C 60 W
V
ISOL
50/60 Hz RMS; I
ISOL
≤ 1 mA 2500 V~
F
C
Mounting force 11...65 / 2.4...11 N / lb
Weight typical 3 g
Symbol Conditions Characteristic Values
typ. max.
I
R
Q T
VJ
= 25°C VR= V
RRM
60 µA
TVJ = 150°C VR= V
RRM
0.2 mA
V
F
R I
F
= 10 A; TVJ= 125°C 1.3 V
TVJ= 25°C 1.75 V
R
thJC
2.5 K/W
R
thCH
0.6 K/W
t
rr
IF = 1 A; -di/dt = 50 A/µs; 30 ns
VR = 30 V; TVJ = 25°C
I
RM
VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs 2 2.4 A
TVJ = 100°C
98758 (12/00)
© 2000 IXYS All rights reserved
DSEE8-06CC
ADVANCE TECHNICAL INFORMATION
1 2 3
* Patent pending
ISOPLUS220
TM
3
2
Isolated back surface *
1
DSEE8-06CC
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Cathode
2 - Anode/Cathode
3 - Anode
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